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1

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NixBi2−xS3) thin films

Sabarish R., Suriyanarayanan N., Kalita J. M., Sarma M. P., Wary G., Kheraj V., Deshmukh S. G.

Materials Science Poland

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2018

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Vol. 36, No. 4

675--684

EN

In this report, ternary semiconducting NixBi2−xS3(x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of NixBi2−xS3 films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni2+ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of NixBi2−xS3 formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap Eg of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.

2

Prawidłowości występujące w diagramach fazowych układów potrójnych Tl-Te-M

Sztuba Z.

Wiadomości Chemiczne

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2009

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[Z] 63, 9-10

803-818

EN

The aim of this work was to present regularities in the phase equilibria in the Tl2Te-MxTey systems, where M stands for metals belonging to periods IV–VI and groups 11–15 of Periodical Table. Additionally, the Tl2Te-As2Te3, Tl2Se-Bi2Se3 and Tl2Te-Tl2Se systems were considered. The phase diagrams are presented in a simple form in Fig. 1 for the following systems: Tl2Te-Cu2Te [1], Tl2Te-ZnTe [2], Tl2Te-CdTe [3], Tl2Te-HgTe [4–6], Tl2Te-In2Te3 [7, 8], Tl2Te-PbTe [9], Tl2Se-Tl2Te [10], Tl2Se-Bi2Se3 [11], Tl2Te-Ga2Te3 [12], Tl2Te-Ag2Te [13], Tl2Te-SnTe [14], Tl2Te-Sb2Te3 [15], Tl2Te-Bi2Te3 [16], Tl2Te-GeTe [17] and Tl2Te-As2Te3 [18]. The state of phase equilibria illustrated by the phase diagram depends on the tendency to chemical compounds formation by the components of a system. This tendency can be observed in the number of compounds formed, their melting points and the type of melting process (congruent or noncongruent). The tendency to compounds formation or at least the melting points of the compounds formed increases with increase of the atomic number of the metal within a group of systems containing as the second component tellurides of metals from a given group in the Periodic Table. There is no correlation between type of phase diagram and metal position in a given period. Thus, increasing the number of outer shell electrons for consecutive elements M of the same group does not affect the tendency to the chemical compounds formation. Regardless of the compounds number – terminal solid solutions have been observed only in some telluride systems. The data in Table 1 show that solid solutions are formed when the value of relative difference between thallium and metal M radii is smaller than 10%. All salt systems arranged in decreasing order of their ionic potentials ratios μ_Tl/μ_M are presented in Table 2. While this ratio decreases the tendency to congruent compounds formation increases abruptly from 1 to 2 at the value of a ratio equal to 0.21, exactly as in the case of typical salts [20]. The influence of molecular stability coefficients on the number of compounds existing in the system (Table 3) has been discussed. The greater difference is between the values of molecular stability coefficients the more compounds are formed. The impact of a common anion change on the shape of phase diagrams for the systems Tl2Te-Bi2Te3 [16] and Tl2Se-Bi2Se3 [11] as well as the regularities in the chalcogenide systems with a common cation has been described. All compounds being components of the systems presented in this work are listed in Table 4.

3

Phase equilibria in the {Zr, Hf}-Ag-Al systems at 500°C and crystal structure of the ternary compounds

Kotur B. Ya., Verbovytsky Yu. V.

Prace Naukowe. Chemia / Wyższa Szkoła Pedagogiczna w Częstochowie

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2003

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Vol. 8

7--15

EN

The phase equilibria at 500°C in the {Zr, Hf}-Ag-Al systems have been investigated in the whole concentration region. Three ternary compounds were found to occur in each of the systems: ZrAg0.32Al2.68 (AuCu3 structure type, space group Pm3m, a=0.41016(1) nm), ZrAg0.16-0.31Al1.84-1.69 (MgCu2 str. type, sp. gr. Fd3 m, a=0.75147(1)-0.75258(1) nm), Zr6Ag1.30-1.82Al5.70-5.18 (W6Fe7 str. type, sp. gr. R3 m, a=0.54017(3)-0.54072(3) nm, c=2.9021(5)-2.9055(3) nm); HfAg0.28-0.43Al1.72-1.57 (MgCu2 str. type, sp. gr. Fd 3 m, a=0.74600(2)-0.74631(3) nm), Hf6Ag0.39-1.43Al6.61-5.57 (W6Fe7 str. type, sp. gr. R3 m, a=0.53098(3)-0.53375(3) nm, c=2.9151(2)-2.9086(3) nm), Hf4Ag1.10Al1.90 (Zr4Al3str. type, sp. gr. P6, a=0.5332(1) nm, c=0.54279(7) nm). The crystal structure of these aluminides was studied using X-ray powder and single crystal diffraction data.

4

New R3T1-xZnx compounds with AuCu3 structure type

Zelinska O., Solokha P., Pavlyuk V., Zelinskiy A.

Prace Naukowe. Chemia / Wyższa Szkoła Pedagogiczna w Częstochowie

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2003

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Vol. 8

89--91

5

The System Yb-Co-P

Budnyk S., Kuz'ma B.

Polish Journal of Chemistry

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2002

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Vol. 76 / nr 11

1553-1558

EN

Phase equilibria in Yb-Co-P system have been investigated at 870 K by X-ray analysis. The existence of early known compounds Yb2Co12P7 (structure Zr2Fe12P7), YbCo5P3 (structure YCo5P3), YbCo3P2 (structure HoCo3P2), Yb6Co30P19 (own structure) and Yb5Co19P12 (structure Sc5Co19P12) has been confirmed. Atomic coordinates in structures Yb2Co12P7 (powder method RF = 0.049) and YbCo3P2 (single crystal method, RF = 0.0393) have been determined.

6

Crystal Structure of the New Ternary Th2Ni17-Type Related Compounds in the R-Mn-Al Systems (R=Gd, Tb, Dy, Ho, Er)

Kotur B, Palasyuk A.M.

Polish Journal of Chemistry

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2001

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Vol. 75, nr 5

633--637

EN

New hexagonal ternary phases R2-yMnzMnxAl17-x have been obtained in the Mn-rich regions of the R-Mn-Al (R = Gd, Tb, Dy, Ho, Er) systems: Gd2-yMnxAl17-x (0_y_0.15, 13.0 _x_ 15.1); Tb2-yMnxAl17-x (0_ y_0.23, 13.2_x_15.2); Dy2-yMnxAl17-x (0_y<~0.2, 11.9_x _14.6); Ho2-yMnxAl17-x (0_y<~0.2, 11.5_x_14.2) and Er2-yMnzMnxAl17-x (0_y_0.27, 0_ z_0.54, 11.3_x_14.1). Th2Ni17-type of structure occurs in alloys with the content of R = 10.5 at.% (ideal R2X17 stoichiometry). When R < 10.5 at.%, two ways of structure constitution are possible: i) formation of the Th2Ni17- type structure with defective 2(b) atomic position (solid solution of subtraction); ii) formation of the Th2Ni17-related type structure with the substitution of part of R atoms by the Mn-Mn pairs (solid solution of multiple substitution).

7

Admittance measurements on CIGS solar cells

Kubiaczyk A., Nawrocka M., Igalson M.

Opto-Electronics Review

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2000

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Vol. 8, No. 4

378-381

EN

Thin film solar cells based on polycrystalline CIGS absorbers are one of the most promising candidates for the low-cost and efficient large-scale solar energy conversion devices. Electronic transport properties of ZnO/CdS/Cu(In,Ga)Se₂ solar cells were investigated by means of admittance measurements in a frequency range from 600 Hz to 1 MHz and a temperature range from 80 to 300 K. Dependent on the sample under investigation, one characteristic frequency (inflection point) corresponding to an activation energy between 80 and 160 meV or two points corresponding to an activation energy about 400 meV have been observed. Analysis of the measured frequencies and obtained activation energies provides information on the equilibrium Fermi level position at the CdS/CIGS interface.

8

Isothermal section of the Li-Yb-Si phase diagram AT 470K

Dmytriv G., Protsaylo L., Pawlyuk W., Bodak O.

Prace Naukowe. Chemia / Wyższa Szkoła Pedagogiczna w Częstochowie

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1999

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Vol. 4

173--177

EN

The isothermal section of the Li-Yb-Si system at 470 K has been investigated by X-ray phase analysis. The crystal structures of four ternary compounds formed have been determined.

PL

Za pomocą analizy rentgenowskiej badano izotermiczny przekrój układu Li-Yb-Si w temperaturze 470 K. Określono krystaliczną strukturę czterech utworzonych związków trójskładnikowych.

9

Investigation of the Ln-Ni-Zn ternary systems

Pavlyuk W., Opainych I., Kevorkov D., Bodak O., Kozioł J. J., Rożdżyńska-Kiełbik B., Bala H.

Prace Naukowe. Chemia / Wyższa Szkoła Pedagogiczna w Częstochowie

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1999

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Vol. 4

165--171

EN

The isothermal section of Ln-Ni-Zn systems (Ln=La, Ce and Er) at 470 K has been investigated by X-ray phase analysis. The crystal structure of ternary compounds formed has been determined by single crystal and powder X-ray diffraction analysis.

PL

Za pomocą analizy rentgenowskiej badano w temp. 470 K przekrój izotermiczny układów Ln-Ni-Zn, gdzie Lo = La, Ce i Er. Strukturę krystaliczną utworzonych trójskładnikowych związków określono wykorzystując metody rentgenowskie badań pojedynczych kryształów i próbek polikrystalicznych.

10

Interactions between the components in the Zr-Ag-In system at 870 K

Gulay L.D., Zaremba V.I., Stępień-Damm J., Kalychak Ya. M.

Polish Journal of Chemistry

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1998

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Vol. 72, nr 8

1886-1889

EN

The interactions between the components in the ternary Zr-Ag-In system were studied. An isothermal section at 870 K was established by X-ray analysis. Two unknown ternary compounds have been found: ZrAg-0.4In-2.6-AuCu3 structure type (space group Pm3m, a=4.3644(4) A and Zr5AgIn3-Hf5CuSn3 structure type (space group P6-3/mcm, a=8.735(3) A, c=5.948(2) A). Their crystal structures were determined by powder X-ray analysis.