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1 Journal of Telecommunications and Information Technology

1 2001

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A model of partially-depleted SOI MOSFETs in the subthreshold range

Tomaszewski D., Łukasiak L., Jakubowski A., Domański K.

Journal of Telecommunications and Information Technology

2001

nr 1

61-64

A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.