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Studies on the growth and characterization of L-cysteine hydrogen fluoride single crystal

Mohammed Azeezaa Varsha, Sagadevan Suresh

Materials Science Poland

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2019

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Vol. 37, No. 3

304--309

EN

L-cysteine hydrogen fluoride (LCHF) single crystals were grown from aqueous solution. Single crystal X-ray diffraction, FT-IR, UV-Vis-NIR, and TG-DTA were used to test the grown crystals. The specimen dielectric and mechanical behaviors were also studied. Powder X-ray diffraction of the grown crystal was recorded and indexed. The optical properties of the LCHF crystal were determined using UV-Vis spectroscopy. It was found that the optical band gap of LCHF was 4.8 eV. The crystal functional groups were identified using FT-IR. Second harmonic generation (SHG) efficiency of the LCHF was three times higher than that of KDP. The dielectric constant, dielectric loss and AC conductivity were measured at different frequencies and temperatures.

2

Studies on structure, growth and characterization of third order nonlinear optical 2-amino-5-chloropyridinium-4-amino benzoate single crystal

Krishnakumar M., Thirupugalmani K., Brahadeeswaran S.

Materials Science Poland

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2017

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Vol. 35, No. 2

313--321

EN

Optically transparent single crystals of 2-amino-5-chloropyridinium-4-amino benzoate (2A5CP4AB) were grown at room temperature using solution growth technique. The structure was solved with a support of single crystal XRD, which revealed that the title compound belongs to the monoclinic crystal system having centrosymmetric space group P21/n. The UV-Vis spectrum and photoluminescence properties of the title compound showed the optical transmittance and emission behavior of the compound. The optical band gap was evaluated using the Tauc plot and it was found to be about 3.53 eV. The third order nonlinear optical behavior of the crystal was determined using Z-scan technique. Mechanical properties of the title compound were studied using Vickers microhardness study.

3

Wzrost politypu 3C-SiC z roztworu metodą TSSG

Raczkiewicz M., Tymicki E., Łukasiewicz T.

Materiały Elektroniczne

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2015

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T. 43, nr 2

4--11

PL

W tej pracy przedstawiono metodę wzrostu węglika krzemu politypu 3C. Jako zarodki posłużyły monokrystaliczne płytki węglika krzemu o politypach heksagonalnych 4H-SiC oraz 6H-SiC. Zbadano wzrost na płaszczyznach o orientacji (0001) oraz (000-1). Określony został zakres temperatur, pozwalający na otrzymanie struktur o wysokiej jednorodności politypowej, która została potwierdzona analizą fazową otrzymanego materiału oraz pomiarami widma Ramana.

EN

In this paper, solution growth of 3C-SiC was demonstrated. Monocrystalline 4H-SiC and 6H-SiC wafers were used as seeds. Growth was observed on (0001) and (000-1) planes. The temperature range enabling the fabrication of 3C-SiC structures of high polytypic homogeneity was determined and 3C-SiC growth was confirmed by XRD and Raman spectroscopy.

4

Chemical bath deposition and characterization of nanocrystalline ZnO thin films

Kathalingam A., Ambika N., Kim M. R., Elanchezhiyan J., Chae Y. S., Rhee J. K.

Materials Science Poland

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2010

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Vol. 28, No. 2

514--522

EN

The subject of this paper is the wet chemical synthesis and characterization of nanocrystalline ZnO thin films. ZnO thin film was deposited on a zinc plate using a chemical bath of zinc acetate (Zn(O2CCH3)2) and ethylenediamine (C2N2H8) at various temperatures. Different substrates were used and their effect on the chemical bath deposition of ZnO were investigated. The effect of pH levels and temperature on the crystalline quality and morphology of the ZnO film are also presented.