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1

Silicon-on-Insulator technology for imaging and application to a switching photodetector

Abdo N., Sallin D., Koukab A., Estribeau M., Magnan P., Kayal M.

International Journal of Microelectronics and Computer Science

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2015

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Vol. 6, nr 4

136--141

EN

This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for low light imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a resonant cavity, which is useful in application with a very narrow spectrum of interest, such as bioluminescence imaging. The SOI implementation of a switching photodetector based with an hybrid MOS-PN structure is presented and its advantages in terms of dark current minimization and SNR improvement highlighted.

2

Analysis and optimization of LUDMOS transistors on a 0.18um SOI CMOS technology

Toulon G., Cortés I., Morancho F., Villard B.

International Journal of Microelectronics and Computer Science

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2010

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Vol. 1, nr 1

3-8

EN

This paper is focused on the design and optimization of power LDMOS transistors (V br > 120 Volts) with the purpose of being integrated in a new generation of Smart Power technology based upon a 0.18 μm SOI-CMOS technology. The benefits of applying the shallow trench isolation (STI) concept along with the 3D RESURF concept in the LDMOS drift region is analyzed in terms of the main static (Ron-sp/Vbr tradeoff) and dynamic (Miller capacitance and QgxRon FOM) characteristics. The influence of some design parameters such as the polysilicon gate electrode length and the STI length are exhaustively analyzed.

3

SOI Technology: An Opportunity for RF Designers?

Raskin J.-P.

Journal of Telecommunications and Information Technology

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2009

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nr 4

3-17

EN

This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leading to substantially reduced substrate losses. Substrate resistivity values higher than 1 k? cm can easily be achieved and high resistivity silicon (HRS) is commonly foreseen as a promising substrate for radio frequency integrated circuits (RFIC) and mixed signal applications. In this paper, based on several experimental and simulation results the interest, limitations but also possible future improvements of the SOI MOS technology are presented.

4

CMOS evolution. Development limits

Jakubowski A., Łukasiak L.

Materials Science Poland

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2008

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Vol. 26, No. 1

5--20

EN

Evolution of complementary metal oxide semiconductor (CMOS) technology is presented from the very first MOS transistors to state-of-the-art structures. Difficulties of scaling are discussed together with ways to overcome them. New options for silicon microelectronics (SOI technology and strain engineering) are described. Finally, fundamental limitations to progress in semiconductor devices are considered.

5

System akwizycji danych do ultraszybkich detektorów krzemowych do źródeł elektronów i promieniowania gamma

Jastrząb M., Czermak A., Dulny B., Kucewicz W., Niemiec H., Sapor M., Sowicki B., Zalewska A.

Elektronika : konstrukcje, technologie, zastosowania

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2005

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Vol. 46, nr 10

8-10

PL

Wymagania stawiane przez kolaborację SUCIMA, dotyczące monitorowania natężenia i profilu wiązki dla hadronoterapii, oraz potrzeby szybkiego pomiaru dawki promieniowania przy wykorzystaniu detektorów monolitycznych z aktywnymi komórkami (MAPS) przyczyniły się do zaprojektowania specjalizowanego systemu akwizycji danych (DAQ SUCIMA—IMAGER). Hadronoterapia jest zaawansowaną techniką leczenia nowotworów przy wykorzystaniu takich cząstek, jak protony i lekkie jony. System DAQ został zaprojektowany na bazie zaawansowanego układu programowalnego FPGA (Field Programmable Gate Array) - VIRTEX II firmy XILINX. Dedykowany moduł elektroniczny do odczytu sygnałów analogowych, ich cyfrowej obróbki oraz przesyłania do komputera PC został zbudowany i przetestowany. Zaprojektowany system SUCIMA_IMAGER jest odpowiedni dla detektorów krzemowych zrealizowanych w technologiach CMOS oraz SOI (Silicon On Insulator). Projekt systemu oraz przykłady rezultatów uzyskanych z detektorami MAPS zaprezentowano w niniejszej pracy.

EN

In SUCIMA collaboration, the needs for real time beam intensity and profile monitoring for the hadrontherapy as well as requirements for the fast dosimetry using Monolithic Active Pixel Sensors (MAPS) forced to design unique Data Acquisition System (DAQ SUCIMA_IMAGER). Hadrontherapy is an advanced radiotherapic technique to treat radioresistant and inoperable tumors using particles like protons and light ions. The DAQ system has been developed on one of the most advanced XILINX Field Programmable Gate Array chip - VIRTEX II. The dedicated, multifunctional electronic board for the detector's analogue signals capture, the parallel digital processing as well as transmission through the high speed USB 2.0 port has been prototyped and tested. The designed DAQ system is suitable for silicon detectors realized in CMOS Technology and Silicon On Insulator (SOI) Technology as well. Design of DAQ SUCIMA_IMAGER system and example of results obtained with MAPS sensors will be presented in the paper.

6

Thermal models for silicon-on-insulator-based optical circuits

Biwojno K., Sujecki S., Vukovic A., Benson T.M., Sewell P.

Optica Applicata

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2004

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Vol. 34, nr 2

149-161

EN

Silicon has many advantages as a material for planar photonics but it does not possess a linear electro-optic effect. Whilst free carrier injection has been used to produce optical switches based on silicon on insulator (SOI) rib waveguides, the thermo-optic effect provides an attractive alternative way of modulating the refractive index in these structures. In this paper a fast analytical thermal solver is developed for SOI-based thermo-optic switches. It is shown that lateral heat leakage limits the temperature rise that can be achieved for a given thermal input power. The analytical model is then extended to allow investigation of the effect of thermal isolation trenches. These are found to improve performance by a factor of three. Finally, the effect of these trenches on the modes supported by the waveguide is briefly discussed.

7

High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection

Nazarov A.N., Houk Y., Kilchytska V.I.

Journal of Telecommunications and Information Technology

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2004

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nr 1

50-61

EN

Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during the high-field electron injection into buried oxide of silicon-on-insulator structures fabricated by different technologies are analyzed based on the data obtained from current-voltage, injection current-time, and capacitance-voltage characteristics together with SIMS data. Electron injection both from the Si film and the Si substrate is considered. The possibility of using the trap-assisted electron tunneling mechanisms to explain the high-field charge transfer through the buried oxides of UNIBOND and SIMOX SOI materials is considered. It is shown that considerable positive charge is accumulated near the buried oxide/substrate interface independently from the direction of the injection (from the film or from the silicon substrate) for UNIBOND and SIMOX SOI structures. Thermal stability of the charge trapped in the buried oxides is studied at temperatures ranging from 20 to 400° C. The theory is compared with the experimental data to find out the mechanisms of the generation of positive charge in UNIBOND and SIMOX buried oxides.

8

Analiza przełączania termicznego w układach optyki zintegrowanej wykonanych na podłożu krzemu

Biwojno K., Sujecki S., Sewell P., Benson T. M.

Elektronika : konstrukcje, technologie, zastosowania

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2002

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Vol. 43, nr 10

43-44

PL

Przeprowadzono analizę numeryczną przełącznika cyfrowego sterowanego termicznie, wykonanego w technologii SOI (silicon on insulator). Temperatura wewnątrz takiego urządzenia regulowana jest przez moc dostarczaną do grzejnika usytuowanego na szczycie żebra światłowodu. Do analizy zastosowano metodę różnic skończonych. Obliczono rozkład temperatury i pola elektromagnetycznego w światłowodzie oraz wyznaczono charakterystyki modowe dla modu podstawowego. Przeanalizowano wpływ temperatury na fazę sygnału świetlnego prowadzonego wzdłuż światłowodu.

EN

Optical switches are key components in flexible fibre systems. Thermo-optic switches can potentially provide low transmission loss, high stability, low power consumption and very large scale integration. In this paper finite difference based thermal and optical waveguide mode simulation are used to investigate the properties of thermo-optic (TO) switches based on silicon-on-insulator, rib waveguides.