Wyniki wyszukiwania - BazTech

1

Badania wybranych materiałów optoelektronicznych z wykorzystaniem fototermicznej radiometrii w podczerwieni

Chrobak Ł., Maliński M.

Przegląd Elektrotechniczny

|

2016

|

R. 92, nr 9

122--124

PL

W artykule przedstawiono wyniki badań materiałów optoelektronicznych z wykorzystaniem fototermicznej radiometrii w podczerwieni (PTR). Opisane zostały szczegóły dotyczące wykorzystanej techniki badawczej. Badania przeprowadzono na próbkach krzemu i krzemu – germanu. Omówiono szczegóły techniczne dotyczące wymagań sprzętowych na potrzeby stanowiska badawczego. W pracy przedyskutowano możliwości interpretacyjne płynące z zastosowania opisanej metody badawczej oraz opisanych modeli matematycznych sygnału PTR.

EN

In this paper the experimental results of the photothermal radiometry (PTR) investigations of the optoelectronic materials have been presented. The details concerning the used technique have been described. Investigations have been performed on the silicon and silicongermanium samples. Details of the experimental set-up have been discussed. In this work the interpretation abilities connected with the usage of the described experimental method and the described PTR signal mathematical models have been discussed.

2

Oxidation kinetics of silicon strained by silicon germanium

Grabowski J., Beck R. B.

Journal of Telecommunications and Information Technology

|

2007

|

nr 3

30-32

EN

This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.

3

Challenges for 10 nm MOSFET process integration

Östling M., Malm B. G., Haartman M., Hallstedt J., Zhang Z., Hellström P. E., Zhang S.

Journal of Telecommunications and Information Technology

|

2007

|

nr 2

25-32

EN

An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed. As an example, ultra thin body SOI devices with high mobility SiGe channels are demonstrated.

4

Artificial adaptive agent model characterized by learning and fairness in the ultimatum games

Hayashida T., Nishizaki I., Katagiri H.

Journal of Telecommunications and Information Technology

|

2007

|

nr 4

36-44

EN

This paper examines the result of the experimental research on the ultimatum games through simulation analysis. To do so, we develop agent-based simulation system imitating the behavior of human subjects in the laboratory experiment by implementing a learning mechanism involving a concept of fairness. In our agent-based simulation system, mechanisms of decision making and learning are constructed on the basis of neural networks and genetic algorithms.

5

Krzemogerman SiGe w mikroelektronice

Łukasiak L., Jakubowski A., Beck R. B., Pióro Z.

Elektronika : konstrukcje, technologie, zastosowania

|

2006

|

Vol. 47, nr 4

34-37

PL

Przedstawiono korzystne właściwości materiałowe krzemogermanu oraz jego zastosowanie w przyrządach półprzewodnikowych, takich jak tranzystor bipolarny (baza) oraz tranzystor MOS.

EN

In this paper advantageous material properties of silicon-germanium are presented as well as the application of SiGe in semiconductor devices, such as: bipolar transistor (base) and MOSFET (channel, gate, source and drain contacts).

6

Silicon-germanium for ULSI

Hall S., Eccleston B.

Journal of Telecommunications and Information Technology

|

2000

|

nr 3-4

3-9

EN

The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.