Wyniki wyszukiwania - BazTech

1

Recent ad advances in silicon quided-wave MOEMS: from technology to applications

Gorecki C.

Opto-Electronics Review

|

2001

|

Vol. 9, No. 3

248-256

EN

We will discuss the recent developments in the field of quided-wave MOEMS, The goal well be to review the processes involved in the fabrication of silicon-based optical wavequides and will proceed to describe and analyse how this photonic technology may be integrated within the MEMS environment. Finally, some examples of optical functions that can benefit by the integration of optical wavequides with MEMS will be described, such as integrated optic switches, integrated optical modulators, micromachined optical sensors, and microprobes for optical near-field microscopy.

2

Fabrication and properties of the field emission array with self-alignment gate electrode

Barth W., Dębski T., Rangelow I.W., Grabiec P., Studzińska K., Zaborowski M., Mitura S., Biehl S., Hudek P., Kostic I.

Journal of Telecommunications and Information Technology

|

2001

|

nr 1

49-52

EN

A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies.

3

Technologie połączeń w czujnikach pomiarowych

Szczepański Z.

Elektronika : konstrukcje, technologie, zastosowania

|

1998

|

Vol. 39, nr 6

3-1

PL

W ostatnim okresie został dokonany duży postęp zarówno w konstrukcji, jak i technologii czujników pomiarowych. Wiele z nich opartych jest na strukturach krzemowych wykonywanych przy wykorzystaniu mikromechaniki objętościowej w krzemie. Jedną z głównych operacji procesu wytwarzania czujników jest dołączanie struktury czujnika do obudowy. Proces ten jest szczególnie istotny w przypadku krzemowych czujników ciśnienia. W artykule przedstawiono różne metody montażu struktur czujników, podając ich zalety i ograniczenia, jak również pewne problemy technologiczne. Specjalna uwaga została zwrócona na proces elektrostatycznego dołączania, który jest powszechnie stosowaną metodą dla czujników opartych na strukturach krzemowych.

EN

During the last years a great progress in sensor design and technology has been made. Many of new sensors are produced using silicon micromachining, which enables various precise three dimensional silicon sensor microstructures to fabricate. One of the main process step of the sensor manufacturing is die attachment process. This especially concerns silicon pressure sensors. This paper presents alternative assembly methods, giving their advantages and limitations, likewise same technological problems. Special attention is facused on anodic bonding process which is widely used method for the sensors based on silicon micromachining.