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The effect of elastic and inelastic scattering on electronic transport in open systems

Kulinowski Karol, Wołoszyn Maciej, Radecka Marta, Spisak Bartłomiej J.

International Journal of Applied Mathematics and Computer Science

2019

Vol. 29, no. 3

427--437

The purpose of this study is to apply the distribution function formalism to the problem of electronic transport in open systems, and to numerically solve the kinetic equation with a dissipation term. This term is modeled within the relaxation time approximation and contains two parts, corresponding to elastic or inelastic processes. The collision operator is approximated as a sum of the semi-classical energy dissipation term and the momentum relaxation term, which randomizes the momentum but does not change the energy. As a result, the distribution of charge carriers changes due to the dissipation processes, which has a profound impact on the electronic transport through the simulated region discussed in terms of the current–voltage characteristics and their modification caused by the scattering. Measurements of the current–voltage characteristics for titanium dioxide thin layers are also presented, and compared with the results of numerical calculations.

Novel electron mobility model for n-HgCdTe

Yoo S. D., Ko B. G., Lee G. S., Park J. G., Kwack K. D.

Opto-Electronics Review

1999

Vol. 7, No. 4

339-345

In the conventional simulations for HgCdTe device, the empirical mobility model is used which lacks in generality. Especially, the field dependent mobility is found to be wrong by comparing Monte Carlo results. The semi - empirical electron mobility model for the simulator is proposed in this paper. Low field mobility consists of two terms related to ionised impurity and phonon scattering. It is calculated by using the relaxation time approximation, which gives the information on the dominant factors affecting the mobility. The ionised impurity mobility model is modified based on Brooks - Herring model to include the degeneracy effect and overlap integral. For field dependent mobility, a new formula is proposed to take into account features of the dominant scattering mechanism such as nonparabolic relation between energy and wave function at high field. Final formula is accomplished by introducting fitting parameters extracted from Monte Carlo simulation results. This new model retains more physical meaning than conventional model.