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1 Journal of Telecommunications and Information Technology

1 2001

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Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures

Pankov Y., Druzhinin A.

Journal of Telecommunications and Information Technology

2001

nr 1

46-48

A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3ź10(19)cm(-3) only.