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Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques

Dorywalski Krzysztof, Chrobak Łukasz, Maliński Mirosław

Metrology and Measurement Systems

2020

Vol. 27, nr 2

323--337

This work presents results of comparative studies of the optical absorption coefficient spectra of ion implanted layers in silicon. Three nondestructive and noncontact techniques were used for this purpose: spectroscopic ellipsometry (SE), modulated free carriers absorption (MFCA) and the photo thermal radiometry (PTR). Results obtained with the ellipsometric method are the proof of correctness of the results obtained with the MFCA and PTR techniques. These techniques are usually used for investigations of recombination parameters of semiconductors. They are not used for investigations of the optical parameters of semiconductors. Optical absorption coefficient spectra of Fe+ and Ge+ high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.

Photoacoustic spectroscopy analysis of thin semiconductor samples

Bychto L., Maliński M.

Opto-Electronics Review

2018

Vol. 26, No. 3

217--222

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In₂S₃ thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.

Chosen Aspects Of Investigations Of Solar Cells With The Laser Beam Induced Current Technique

Chrobak Ł. B., Madej W. R., Maliński M. A.

Metrology and Measurement Systems

2015

Vol. 22, nr 2

241--250

This paper presents maps of spatial distributions of the short circuit current Isc(x,y) and the open circuit voltage Uoc(x,y) of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I–V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.