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1 2000

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Crystal growth and characterisation of In-rich phases in Cu-In-Ga-Se system

Filipowicz J. I., Bacewicz R., Wolska A.

Opto-Electronics Review

2000

Vol. 8, No. 4

372-374

Technological parameters of crystal growth using Bridgman-Stockbarger method for some materials of Cu-In-Se and Cu-In-Ga-Se systems are presented. Single crystals as large as 1 cm³ have been grown. The composition variation along crystal ingots was determined by the microprobe analysis. A strong segregation effect is observed. Crystals with composition close to the compounds with nominal compositions Cu₂In₄Se₇, CuIn₃Se₅, CuIn₅Se₈, CuGa₃Se₅ and Cu(In₀.₈Ga₀.₂)₃Se₅ were identified. Photolumiscence spectra of the crystals from the Cu-In-Se system were measured and analysed in terms of quasi-donor-acceptor transitions.