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PL
Przedstawienie innowacyjnej konstrukcji wentylatora osiowego dwustopniowego bez dyfuzora charakteryzującego się wysoką sprawnością i niskim hałasem.
EN
Presentation of the innovative construction of the two stage axial fan without diffuser. This fan is characterized by high efficiency and low noise.
EN
This paper introduces a low-noise, low-power amplifier for high-impedance sensors. An innovative circuit using an auto-zeroed architecture combined with frequency modulation to reject offset and low-frequency noise is proposed and analysed. Special care was given to avoid broadband noise aliasing and chopping in the signal path, and to minimize both the resulting equivalent input offset voltage and equivalent input biasing current. The theoretical noise analysis of the proposed topology covers most of the noise sources of the circuit. Simulations show that the input-referred noise level of the circuit is 13.4nV/√Hz for a power consumption of 85µA with a power supply from 1.8V to 3.6V.
EN
In this paper, a low-noise, low-power and low voltage Chopper Stabilized CMOS Amplifier (CHS-A) is presented and simulated using transistor model parameters of the AMS 0.35 μm CMOS process. This CHS-A is dedicated to high resistive gas sensor detection. The proposed CHS-A using Chopper Stabilization technique (CHS) exhibits an equivalent input referred noise of only 0.194 nV/√Hz for a chopping frequency of 210 kHz under ۫.25 V supply voltage and 26.5 dB voltage gain. The inband PSRR is above 90 and the CMRK exceeds 120 dB. At the same simulation condition, the total power consumption is 5 μW only.
EN
The paper presents column parallel signal processing techniques for reducing Random Telegraph Signal (RTS) noise of in-pixel source follower by using histogram analysis for the development of a very low-noise CMOS image sensor. In this method, a histogram with multiple samples for reset level is used to estimate the amplitude of the RTS noise. With the median of the histogram and the estimated amplitude, the RTS noise components are removed and the average is calculated with the histogram due to thermal noise only, to further reduce the noise level. Result of the application of the histogram-based noise suppres-sion to an implemented CMOS image sensor prototype for a large sampling numbers is demonstrated.
5
Content available remote Przekładnie ślimakowe serii "W"
PL
Przekładnie ślimakowe serii "W" BONFIGLIOLI stosowane są w przypadkach, gdy zależy na dużej liczbie przełożenia i znacznej równomierności przenoszenia ruchu przy zachowaniu możliwie największej cichobieżności. Przekładnie serii "W" zastępują dotychczas produkowane przekładnie ślimakowe serii "VF", przy czym są z nimi w pełni wymienialne. Przekładnie ślimakowe "W-EP" z korpusem pokrytym specjalną warstwą tworzywa epoksydowego, elementami przekładni wykonanymi ze stali kwasoodpornej oraz specjalnymi uszczelnieniami, zalecane są w przemyśle spożywczym.
6
Content available remote Low-noise infrared and visible focal plane arrays
EN
While charge-coupled device ( CCD ) technology is often perceived to provide nearly optimum signal multiplexing and very low imager noise, coupling high performance detectors ( at cutoff wavelengths from 0.6 žmto 17 um ) to CMOS multiplexers provides lower (<10 e-) read noise at high data rates using several pixel amplifier schemes. This superiority is fundamental and has been validated on infrared and visible focal plane arrays. Thus the robust pixel-based signal amplification facilitated by sub-micron CMOS is stimulating low-noise focal plane array (FPA) development for discriminating applications including infrared astronomy, wavefront sensing, spectroscopy, and spaceborne images. Enabled by Moore's Law and concomitant increases in integration density, commercial imagers for consumer video are also providing very low read noise and high sensitivity. Hence we report the ability to usefully detect quanta at non-cryogenic operating temperatures because read noise is at the single-electron level at high video rates. While such advances are typically first demonstrated on infrared sensors, the enhancements migrate to visible devices as soon as the available lithography of the prevailing silicon CMOS technology permits, because visible imager pixels are necessarily much smaller to match the optical blur.
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