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In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures

Godlewski M., Wojtowicz T., Goldys E. M., Phillips M. R., Czernecki R., Prystawko P., Leszczynski M., Perlin P., Grzegory I., Porowski S., Bottcher T., Figge S., Hommel D.

Opto-Electronics Review

2004

Vol. 12, No. 4

353-359

Cathodoluminescence (CL) technique is applied for evaluation of in-depth and in-plane variations of light emission from semiconductor heterostructures, including laser diode structures. Light emission properties of heteroepitaxial and heteroepitaxial structures, are studied. We demonstrate possibility of in-depth profiling of complicated multi quantum well structures, which allows us to evaluate light emission characteristics from different regions of, e.g., laser structures. Due to this property of the CL, we can evaluate interconnections between structural quality of the samples and light emission characteristics. Stimulated emission under electron bean pumping is achieved in a conventional CL, set up for selected heterostructures. Thereshold currents for stimulated emission are evaluated from the CL investigations. We demonstrate that potential fluctuations are not fully screened in the active regions of laser structures, even at large excitation densities.

Laser emission spectro-analyser - instrument for non-destructive checking and diagnostics

Owsik J., Zarwalska A., Kotyuk A., Ulanovskij M.

Journal of Technical Physics

2000

Vol. 41, no 1

75-81

A portable laser emission spectro-analyser for analysis of chemical constitution of materials is described in the paper and examples of its applications are given.