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2 Journal of Telecommunications and Information Technology

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Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base

Zaręba A., Łukasiak L., Jakubowski A.

Journal of Telecommunications and Information Technology

2007

nr 3

88-92

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

Optimization of selected parameters of SiGe HBT transistors

Zaręba A., Jakubowski A.

Journal of Telecommunications and Information Technology

2000

nr 3-4

15-18

SiGe-base HBTs with Gaussian doping distribution are modeled including the effect of the drift field and variable Ge concentration in the base on the diffusion coefficient. Two different Ge distributions in the base are considered: a triangular one and a box one.