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Optimization of optical characteristics of In0.29Ga0.71As0.99N0.01/GaAs straddled nano-heterostructure

Sandhya K., Bhardwaj G., Dolia R., Lal P., Kumar S., Dalela S., Rahman F., Alvi P. A.

Opto-Electronics Review

2018

Vol. 26, No. 3

210--216

Designing of a nanoscale Quantum Well (QW) heterostructure with a well thickness of ~60 Å is critical for many applications and remains a challenge. This paper has a detailed study directed towards designing of In0.29Ga0.71As0.99N0.01/GaAs straddled nanoscale-heterostructure having a single QW of thickness ~60 Å and optimization of optical and lasing characteristics such as optical and mode gain, differential gain, gain compression, anti-guiding factor, transparency wavelength, relaxation oscillation frequency (ROF), optical power and their mutual variation behavior. The outcomes of the simulation study imply that for the carrier concentration of ~2 × 10¹⁸cm⁻³ the optical gain of the nano-heterostructure is of 2100 cm⁻¹ at the wavelength is of 1.30 μm. Though the obtained gain is almost half of the gain of InGaAlAs/InP heterostructure, but from the wavelength point of view the InGaAsN/GaAs nano-heterostructure is also more desirable because the 1.30 μm wavelength is attractive due to negligible dispersion in the silica based optical fiber. Hence, the InGaAsN/GaAs nano-heterostructure can be very valuable in optical fiber based communication systems.