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1
Content available The influence of the cuboid float’s parameters on the stability of a floating building
Karczewski Artur, Piątek Łukasz
Polish Maritime Research
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2020
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nr 3
16--21
EN
Usually, the concept of sufficient stability of a floating structure is connected with the capacity to keep a small heel angle despite the moment of heeling. The variable responsible for these characteristics is the initial metacentric height, which is the relation between the hydrostatic features of the pontoon and the mass properties of the entire object. This article answers the questions of how heavy the floating system should be, what the minimum acceptable draft is, and whether it is beneficial to use internal fixed ballast. To cover various technologies, a theoretical model of a cuboid float with average density representing different construction materials was analysed. The results indicate that the common practice of using heavy and deep floating systems is not always reasonable. In the case of floating buildings, which, unlike ships, can be exploited only under small heel angles, the shape and width of the submerged part of the object may influence the stability more than the weight or draft.
2
Content available An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
Tomaszewski D., Łukasiak L., Gibki J., Jakubowski A.
Journal of Telecommunications and Information Technology
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2001
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nr 1
57-60
EN
An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
3
Content available A model of partially-depleted SOI MOSFETs in the subthreshold range
Tomaszewski D., Łukasiak L., Jakubowski A., Domański K.
Journal of Telecommunications and Information Technology
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2001
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nr 1
61-64
EN
A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
4
Content available remote Analysis of nonlinear systems in offshore engineering
Ellermann K., Kreuzer E.
Vibrations in Physical Systems
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2000
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Vol. 19
18--19
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