Wyniki wyszukiwania - BazTech

1

On prognosis of variation of properties of epitaxial layers by choosing of temperature field during growth

Pankratov E.L.

Computer Methods in Materials Science

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2020

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Vol. 20, No. 1

1--6

EN

In this paper, we analyze the influence of the temperature of growth of epitaxial layers during their growth. Conditions are formulated under which the homogeneity of the properties of the epitaxial layers increases. An analytical approach for the analysis of mass and heat transfer is proposed, allowing at the same time to take into account changes in the parameters of processes both in space and in time, as well as nonlinearity of these processes.

PL

W artykule opisano analizę wpływu temperatury na wzrost epitaksjalnych warstw w procesie technologicznym. Sformułowano szereg warunków dla poprawy jednorodności badanych warstw. Wprowadzono analityczne rozwiązanie dla równania transportu masy i ciepła. To rozwiązanie umożliwiło uwzględnienie zmian parametrów procesu zarówno w przestrzeni jak i w czasie. Ponadto przeprowadzone rozwiązanie pozwoliło na uwzględnienie nieliniowości badanego procesu.

2

Computer implementation of mass transport in Matlab environment for modeling Epitaxial growth process with moving boundary problem

Gulkowski S.

TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk

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2015

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Vol. 19, No 1

15--23

EN

Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry. However, a lateral growth process depends on many technological parameters such as the temperature of the system, the cooling rate, the solvent or the geometry of the mask. For this reason finding optimized settings for these factors in experimental research is difficult and time consuming. Numerical analysis of the growth process leads to better understanding of the fundamentals of the growth process. For this reason a computational model of epitaxial growth was proposed. This paper focuses on the accuracy of the numerical solution of the mass transport process during epitaxial growth. The method was implemented in the Matlab environment for the moving boundary application. The results of the calculations are presented.

3

Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC

Skibinski J., Wejrzanowski T., Teklinska D., Kurzydlowski K. J.

Journal of Power Technologies

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2015

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Vol. 95, nr 2

119--125

EN

In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wall CVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimal process conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Since there are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactor geometry, it is difficult to design an optimal process. Detailed 3D modeling was used to gain insight into the process conditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside the reactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat and mass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhance the performance of the Aixtron VP508 reactor.

4

Growth and properties of ZnO films grown using pa-movpe with DMZn and N2O

Nakano T., Nishimoto K., Sumiya M., Fuke S.

Journal of Automation Mobile Robotics and Intelligent Systems

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2009

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Vol. 3, No. 4

124-126

EN

ZnO films were grown by plasma-assisted metal organic vapor phase epitaxy (PA-MOVPE) using dimethylzinc (DMZn) and N O gases. The crystallinity and surface morphology of ZnO films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallinity of ZnO improved (a) when the N2O flow rate was increased, because vapor phase reaction was suppressed while surface migration was enhanced, and (b) when the growth temperature was increased, because surface diffusion was enhanced. In the PA-MOVPE method with N2O gases and DMZn, both the N2O flow rate and crystal growth temperature strongly affected the crystallinity of ZnO films.

5

A new drain insulation design in GaAs SD-MAGFET

Boratyński B., Kordalski W., Ściana B., Panek M., Zborowska-Lindert I.

Materials Science Poland

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2008

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Vol. 26, No. 1

27--21

EN

A new design of a split-drain MAGFET type magnetic sensor based on GaAs MESFET device with a sandwich-like drain configuration has been investigated. An excellent performance of the sensor, namely its high sensitivity and spatial resolution to magnetic field could be obtained as a result of an extremely short (200 nm) distance between the transistor drains realized using a unique epitaxial layer structure. A proper sequence of the AlGaAs/GaAs/AlAs/GaAs epitaxial layers grown by MOCVD technique followed by selective etching process has been proposed and realized. Structural parameters of the layers were studied. Electrical performance of the insulated drain structure was evaluated by measurements of the leakage current that was less than 10 nA for 2 V drain voltage bias difference.

6

Magnetic thin films and nanostructures for emerging technologies.

Krishnan K.M.

Inżynieria Materiałowa

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1998

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R. XIX, nr 4

775-778

EN

The optimization of the magnetic properties of materials for a wide range of technologies requires a dynamic iteration between synthesis, property measurements and the evaluation/control of microstructure (physical, chemical & magnetic) at the appropriate length scales. In addition, atomically engineered thin films and nanostructures offer new opportunities to elucidate the physics of magnetism, test new theories and most importantly build new materials with unique anisotropy, transport and hysteretic properties. These interests arise from advances in materials synthesis, an increased appreciation of the degree to which magnetic properties are influenced by microstructure and interfacial processes and the ability to characterize them by electron-optic and x-ray scattering/dichroism techniques. In this paper, we present an overview of our recent work in these areas, involving an integrated approach of growth/synthesis, property measurements and advanced characterization.