The current state of art of electrostatic force microscopy is described in the paper. The principle of electrostatic force operation enabling one to analyse local voltage distribution and capacitance is pre-sented. The design and properties of electrostatic force microscopy microprobes are discussed. The application and manufacturing process of piezoresistive cantilevers with conductive tips and of silicon beams with metallic probe are presented. In order to show the capabilities of electrostatic force micros-copy methods of investigations of local voltage distribution on surfaces of microelectronic integrated circuits (IC) are described. Improvements of electrostatic force microscopy and of other electrical meth-ods based on scanning probe microscopy confirm an increasing interest in electrical probing at the nanometre scale.
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