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Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature

Veleschuk V, Vlasenko A, Kisselyuk M, Vlasenko Z, Khmil D, Borshch V

Optica Applicata

2015

Vol. 45, nr 4

535--543

The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.