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Development of gettering processes for the preparation of the solar silicon material

Efremov A. A., Klyui N. I., Litovchenko V. G., Popov V. G., Romanyuk A. B., Romanyuk B. N.

Opto-Electronics Review

2000

Vol. 8, No. 4

410-413

A number of gettering treatments of Cz-Si wafers have been investigated. The characteristic parameters of the wafers have been measured. Among the procedures used, the gettering treatment, which included deposition of Ge film, followed by ion beam mixing and thermal annealing was preferred. This treatment allows to increase the diffusion length (Ld) of non-equilibrium carriers from 25-30 µm to 100-300 µm. The subsequent treatments did not lead to deterioration of Ld as it took place for the wafers without gettering treatments.