Wyniki wyszukiwania - BazTech

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Nanostructures with Ge–Si quantum dots for infrared photodetectors

Izhnin I. I., Fitsych O. I., Voitsekhovskii A. V., Kokhanenko A. P., Lozovoy K. A., Dirko V. V.

Opto-Electronics Review

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2018

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Vol. 26, No. 3

195--200

EN

In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model material system for theoretical investigations, heterostructures with germanium-silicon quantum dots on the silicon surface are chosen. For calculations of the dependencies of quantum dots array parameters on synthesis conditions the kinetic model of growth of differently shaped quantum dots based on the general nucleation theory is proposed. The theory is improved by taking into account the change in free energy of nucleation of an island due to the formation of additional edges of islands and due to the dependence of surface energies of facets of quantum dots on the thickness of a 2D wetting layer during the Stranski–Krastanow growth. Calculations of noise and signal characteristics of infrared photodetectors based on heterostructures with quantum dots of germanium on silicon are done. Dark current in such structures caused by thermal emission and barrier tunneling of carriers, as well as detectivity of the photodetector in the approximation of limitation by generation-recombination noises are estimated. Moreover, the presence of dispersion of quantum dots by size is taken into account in the calculations of the generation-recombination noises. Results of calculations of the properties of structures with quantum dots and their dependencies on growth parameters, as well as the characteristics of quantum dot photodetectors are presented. Comparison of the estimated parameters of quantum dots ensembles and the characteristics of quantum dot photodetectors with experimental data is carried out.

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Wykrywalność detektorów średniej podczerwieni wykonanych z supersieci InAs/GaSb

Ciura Ł., Kolek A., Czuba K., Jureńczyk J., Jasik A., Sankowska I., Kaniewski J.

Elektronika : konstrukcje, technologie, zastosowania

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2016

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Vol. 57, nr 9

10--13

PL

W artykule rozważono wpływ różnych typów szumów na wykrywalność detektora średniej podczerwieni wykonanego z supersieci InAs/GaSb. W rozważaniach uwzględniono wpływ układów polaryzacji i wzmacniania sygnału oraz różne rodzaje szumów występujące w detektorze. Wykrywalność detektora wyznaczono z uwzględnieniem szumu 1/f, szumu układu wzmacniania, szumu śrutowego i termicznego.

EN

This paper concerns the influence of various noise mechanisms on detectivity of midwavelength infrared detectors made of InAs/GaSb superlattice. Measurements and amplifying setup of the signal was been shown. The article provide basic characterization of the noise types which occur in infrared detectors. The real detectivity of the detector was been calculated taking into account various noise: 1/f noise, amplifying system noise, thermal noise, and finally shot noise.

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Optymalizacja epitaksji i doskonalenie architektury detektorów podczerwieni z HgCdTe

Gawron W., Piotrowski A., Kłos K., Orman Z., Pawluczyk J., Stanaszek D., Kębłowski A., Pędzińska M., Piotrowski J.

Elektronika : konstrukcje, technologie, zastosowania

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2009

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Vol. 50, nr 5

61-67

PL

Artykuł przedstawia najciekawsze wyniki prac badawczych uzyskanych w Vigo System S.A. w ramach realizacji zadania nr 5 PBZ -MNiSW 02/I/2007 pt.: "Niechłodzone detektory podczerwieni z HgCdTe". W pracy przedstawiony został postęp w technologii heterostruktur z HgCdTe i własności uzyskanych z nich detektorów średniej i dalekiej podczerwieni (MWIR i LWIR).

EN

This article presents scientific results of works carried out in Vigo System S.A., accomplished during realization of grant 5 PBZ-MNiSW 02/I/2007 supported by the Polish Ministry of Science and Higher Education and entitled Uncooled photodetectors from HgCdTe. The paper describes the progress of technology of HgCdTe heterostructures and properties of MWIR and LWIR detectors.

4

Insight into performance of quantum dot infrared photodetectors

Martyniuk P., Rogalski A.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2009

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Vol. 57, nr 1

103-116

EN

In the paper, an algorithm for theoretical evaluation of dark and illumination characteristics of quantum dot infrared photodetectors (QDIPs) is presented. The developed algorithm is based on a model previously published by Ryzhii and co-workers. In our considerations it is assumed that both thermionic emission and field-assisted tunnelling mechanisms determine the dark current of quantum dot detectors. The model permits to calculate the dark current, current gain, average number of electrons in quantum dots, photocurrent, and detector responsivity as a function of the structural parameters. Moreover, it explains some features of QDIP characteristics. In several cases, the theoretical predictions are compared with experimental data. Good agreement between both kinds of data has been obtained.

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Niechłodzone i minimalnie chłodzone detektory średniej i dalekiej podczerwieni nowej generacji

Piotrowski A., Gawron W., Kłos K., Rutkowski J., Orman Z. Z., Pawluczyk J., Stanaszek D., Mucha H., Piotrowski J., Rogalski A.

Elektronika : konstrukcje, technologie, zastosowania

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2008

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Vol. 49, nr 11

112-121

PL

Artykuł przedstawia wyniki prac badawczych uzyskanych w Vigo System S.A. i Instytucie Fizyki Technicznej Wojskowej Akademii Technicznej w ramach realizacji zadania nr 5.1 PBZ-MiN-009/T11/2003 pt.: Opracowanie i wykonanie niechłodzonych i minimalnie chłodzonych detektorów średniej i dalekiej podczerwieni nowej generacji. W ramach tej pracy opracowano technologie i przebadano właściwości dwu klas detektorów: detektorów do spektroskopii Fouriera zakresu 3...16 mm i detektorów do szerokopasmowej (1 Gb/s) łączności optycznej w otwartej przestrzeni.

EN

This article presents scientific results of works carried out in VIGO System S.A. and Institute of Applied Physics Military University of Technology, accomplished during realization of grant 5.1 PBZ-MiN-009/T11 /2003 supported by the Polish Ministry of Science and Higher Education and entitled Elaboration and realization of new generation near room temperature middle- and long-wavelength infrared detectors. The paper describes the technology and properties of two types of detectors: photodetectors for Fourier spectroscopy and photodetectors for wide band optical space communication.