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1
Content available Bifurcation analysis, circuit design and sliding mode control of a new multistable chaotic population model with one prey and two predators
Vaidyanathan Sundarapandian, Benkouider Khaled, Sambas Aceng, Darwin P.
Archives of Control Sciences
|
2023
|
Vol. 33, No. 1
127--153
EN
In this work, we report a new chaotic population biology system with one prey and two predators. Our new chaotic population model is derived by introducing two nonlinear interaction terms between the prey and predator-2 to the Samardzija-Greller population biology system (1988). We show that the new chaotic population biology system has a greater value of Maximal Lyapunov Exponent (MLE) than the Maximal Lyapunov Exponent (MLE) of the Samardzija-Greller population biology system (1988). We carry out a detailed bifurcation analysis of the new chaotic population biology system with one prey and two predators. We also show that the new chaotic population biology model exhibits multistability with coexisting chaotic attractors. Next, we use the integral sliding mode control (ISMC) for the complete synchronization of the new chaotic population biology system with itself, taken as the master and slave chaotic population biology systems. Finally, for practical use of the new chaotic population biology system, we design an electronic circuit design using Multisim (Version 14.0).
2
Content available A new two-scroll 4-D hyperchaotic system with a unique saddle point equilibrium, its bifurcation analysis, circuit design and a control application to complete synchronization
Vaidyanathan Sundarapandian, Moroz Irene M., Sambas Aceng
Archives of Control Sciences
|
2023
|
Vol. 33, No. 2
277--298
EN
In this work, we present new results for a two-scroll 4-D hyperchaotic system with a unique saddle point equilibrium at the origin. The bifurcation and multi-stability analysis for the new hyperchaotic system are discussed in detail. As a control application, we develop a feedback control based on integral sliding mode control (ISMC) for the complete synchronization of a pair of two-scroll hyperchaotic systems developed in this work. Numerical simulations using Matlab are provided to illustrate the hyperchaotic phase portraits, bifurcation diagrams and synchronization results. Finally, as an electronic application, we simulate the new hyperchaotic system using Multisim for real-world implementations.
3
Content available A new modified WINDMI jerk system with exponential and sinusoidal nonlinearities, its bifurcation analysis, multistability, circuit simulation and synchronization design
Mohamed Mohamad Afendee, Vaidyanathan Sundarapandian, Hannachi Fareh, Sambas Aceng, Darwin P.
Archives of Control Sciences
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2023
|
Vol. 33, No. 4
711--735
EN
In this work, a new 3-D modified WINDMI chaotic jerk system with exponential and sinusoidal nonlinearities is presented and its dynamical behaviours and properties are investigated. Firstly, some properties of the system are studied such as equilibrium points and their stability, Lyapunov exponents and Kaplan-Yorke dimension. Also, we study the new jerk system dynamics using numerical simulations and analyses, including phase portraits, Lyapunouv exponent spectrum, bifurcation diagram and Poincaré map, 0-1 test. Next, we exhibit that the new 3-D chaotic modified WINDMI jerk system has multistability with coexisting chaotic attractors. Moreover, we design an electronic circuit using MultiSim 14.1 for real implementation of the modified WINDMI chaotic jerk system. Finally, we design an active synchronization scheme for the complete synchronization of the modified WINDMI chaotic jerk systems via backstepping control.
4
Content available The Behavioural Model of Graphene Field-effect Transistor
Łuszczek Maciej, Turzyński Marek, Świsulski Dariusz
International Journal of Electronics and Telecommunications
|
2020
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Vol. 66, No. 4
753--758
EN
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.
5
Content available VHDL-AMS Models for Current Conveyor Based Monolithic Operational Amplifiers
Pandiev Ivailo M.
International Journal of Microelectronics and Computer Science
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2018
|
Vol. 9, nr 1
34--46
EN
This paper focuses on analysis and behavioral modeling of second generation positive and negative current conveyors (CCII+s, CCII‒s), as well current-controlled current conveyors (CCCIIs). On the basis of the proposed CCII+ model improved behavioral models for three-terminal and four-termi-nal monolithic CFOAs are created. The models are developed by using VHDL analog and mixed-signal (VHDL-AMS) language and the descriptions are adapted to the SystemVision (version 5.5) simulation program, which is a part of the Mentor Graphics system. The proposed models simulate static and dynamic para-meters for differential and common-mode input signals at room temperature, including the parameters input offsets, accurate input impedances, non-dominant poles at differential input signals, AC common-mode rejection, PSRR effects, output impe-dances, slew rate limiting and terminal voltage/current operating ranges. The modeling parameters are extracted for commercially available four-terminal CFOA AD844A and CCCII OPA860 by analyzing semiconductor data books or through characterization measurements. For the validation process simulation and experi-mental results for sample electronic circuits are given.
6
Łączna symulacja elektromanetyczno-obwodowa układu dotykowego czujnika pojemnościowego
Scott A., Kwiatkowski J.
Elektronika : konstrukcje, technologie, zastosowania
|
2017
|
Vol. 58, nr 5
4--5
PL
W artykule przedstawiono przykład łącznego zastosowania symulacji elektromagnetycznej i obwodowej do analizy działania układu małego ekranu dotykowego w formie czujnika zbliżeniowego z matrycą elektrod pojemnościowych o rozmiarze 3x3. Model czujnika zbudowano, a następnie jego symulację przeprowadzono w środowisku CST STUDIO SUITE®. Symulacja elektromagnetyczna pozwala w tym przypadku na wizualizację i ocenę ilościową zjawisk niemożliwych do poznania metodami pomiarowymi.
EN
This article presents an example of the combined use of electromagnetic and circuit simulations to analyze the operation of a small touch screen system in the form of a proximity sensor with a 3x3 capacitive sensor array. The sensor model was built and then simulated in a CST STUDIO SUITE® environment. Electromagnetic simulation allows in this case to visualize and quantify the phenomena which are unapproachable by means of measurement methods.
7
Content available Induction machine behavioral modeling for prediction of EMI propagation
Turzyński M.
Bulletin of the Polish Academy of Sciences. Technical Sciences
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2017
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Vol. 65, nr 2
247--254
EN
This paper presents the results of wideband behavioral modeling of an induction machine (IM). The proposed solution enables modeling the IM differential- and common-mode impedance for a frequency range from 1 kHz to 10 MHz. Methods of parameter extraction are derived from the measured IM impedances. The developed models of 1.5 kW and 7.5 kW induction machines are designed using the Saber Sketch scheme editor and simulated in the SABER simulator. Modeling validation is based on prediction of electromagnetic interference (EMI) emissions of common-mode and differential-mode current spectra of experimental inverter-fed IM drives.
8
Content available A new three-dimensional chaotic system with a hidden attractor, circuit design and application in wireless mobile robot
Vaidyanathan S., Sambas A., Mamat M., Sanjaya M.
Archives of Control Sciences
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2017
|
Vol. 27, no. 4
541--554
EN
This research work proposes a new three-dimensional chaotic system with a hidden attractor. The proposed chaotic system consists of only two quadratic nonlinearities and the system possesses no critical points. The phase portraits and basic qualitative properties of the new chaotic system such as Lyapunov exponents and Lyapunov dimension have been described in detail. Finally, we give some engineering applications of the new chaotic system like circuit simulation and control of wireless mobile robot.
9
Content available Analysis and simulation modeling of programmable circuits using digital potentiometers
Pandiev I. M
International Journal of Microelectronics and Computer Science
|
2014
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Vol. 5, nr 4
127--135
EN
In this paper an object of analysis and simulation modeling are the basic programmable circuits using CMOS digital potentiometers or Resistive Digital-to-Analog Converters (RDACs). Based on the analysis and principle of operation an improved SPICE-based behavioral model for RDAC potentiometers is created. The model accurately reflects resolution (wiper steps), nominal end-to-end resistance, wiper resistance, linear and nonlinear increment/decrement of the wiper, common-mode leakage current, operating bandwidth, analog crosstalk, temperature coefficients and noise effects. Model parameters are extracted for the dual RDAC potentiometer AD5235 from Analog Devices as an example. The workability of the proposed simulation model is verified by simulation modeling and experimental testing of sample electronic circuits.
10
Content available Surface Potential Modeling of a High-k HfO2-Ta2O5 Capacitor in Verilog-A
Angelov G. V.
International Journal of Microelectronics and Computer Science
|
2012
|
Vol. 3, nr 3
111-118
EN
A compact model of a high-k HfO2-Ta2O5 mixed layer capacitor stack is developed in Matlab. Model equations are based on the surface potential PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language and it is implemented as external library in Spectre circuit simulator within Cadence CAD system. The results are validated against the experimental measurements of the HfO2-Ta2O5 stack structure.
11
Content available DC Large-Scale Simulation of Nonlinear Circuits on Parallel Processors
Udave D. E. C., Ogrodzki J., de Anda G. M. A.
International Journal of Electronics and Telecommunications
|
2012
|
Vol. 58, No. 3
285-295
EN
Newton-Raphson DC analysis of large-scale nonlinear circuits may be an extremely time consuming process even if sparse matrix techniques and bypassing of nonlinear models calculation are used. A slight decrease in the time required for this task may be enabled on multi-core, multithread computers if the calculation of the mathematical models for the nonlinear elements as well as the stamp management of the sparse matrix entries is managed through concurrent processes. In this paper it is shown how the numerical complexity of this problem (and thus its solution time) can be further reduced via the circuit decomposition and parallel solution of blocks taking as a departure point the Bordered-Block Diagonal (BBD) matrix structure. This BBD-parallel approach may give a considerable profit though it is strongly dependent on the system topology. This paper presents a theoretical foundation of the algorithm, its implementation, and numerical complexity analysis in virtue of practical measurements of matrix operations.
12
Content available Modeling the characteristics of high-k HfO2-Ta2O5 capacitor in Verilog-A
Angelov G. V.
International Journal of Microelectronics and Computer Science
|
2011
|
Vol. 2, nr 3
105-112
EN
A circuit simulation model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer is developed and coded in Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against experimental measurements of the HfO2-Ta2O5 slack structure.
13
Content available New approach to power semiconductor devices modeling
Napieralski A., Napieralska M.
Journal of Telecommunications and Information Technology
|
2004
|
nr 1
80-89
EN
The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.
14
Content available remote A new type of dielectric bolometer mode of infrared detector using ferroelectricn thin film capacitors for uncooled focal plane array
Noda M., Hashimoto K., Kubo R., Tanaka H., Mukaigawa T., Xu H., Okuyama M.
Opto-Electronics Review
|
1999
|
Vol. 7, No. 4
313-320
EN
We have developed a new type of detector pixel circuit operated in an infrared image sensor of dielectric bolometer mode. The detector pixel consists of capacitors of ferroelectric thin film, whose dielectricc constant changes drastically with temperature. After comparing a few kind of ferroelectric materials such as Ba₁₋xSrxTiO₃ (BST) and La modified Sr₁₋xBaxNb₂O₆ (SBN) among each other, the BST is selected as the ferroelectric film in the structure of the detector. Our proposed circuit is a serially connected capacitor-capacitor, where one capacitor is composed of a BST ferroelectric thin film irradiated by infrared light and the other is nonirradiated one. BST film has been prepared on Si membrane structure by pulsed laser deposition method (PLD). Dielectric constant of the BST film, which is about 450 at 25°C, changes by about 1 to 10% K⁻¹ at ambient temperature. As a result of on-board evaluation of the assembled circuit with a source-follower output, the output level is about 40 mV when a relative capacitance change in the capacitor is about 3%. On the other hand, in PSPICE circuit simulations, the output level is about 25 mV when a relative capacitance change in the capacitor of about 100 pF is 1%. The simulated relationship between the output voltage of the assembled circuit and capacitance change of the BST film agrees well with that in the experimental results. It is considered that the circuit has enough output signal level for input of conventional operational amplifier. Voltage responsivity Rv, and specific detectivity D* estimated from temperature change of dielectric constant are 50 kVW⁻¹ and 6.5 x 10⁹ cmHz¹/² W⁻¹, respectively, which means high-sensitivity compared to the other type of IR sensors. The pixel structure also shows a simple configuration, and then is very effective in reducing their pixel size and then increasing the pixel density.
15
Content available remote CAD package for designing of self-testable VLSI circuits
Bojanowicz D.
Bulletin of the Polish Academy of Sciences. Technical Sciences
|
1998
|
Vol. 46, nr 4
514-523
EN
The paper presents a modern CAD package, which aims designers in designing and verification of self-testable VLSI digital circuits.
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