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1
Charakteryzacja struktur SOI za pomocą 3-poziomowej metody pompowania ładunku
Głuszko G., Łukasiak L., Jakubowski A.
Elektronika : konstrukcje, technologie, zastosowania
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2008
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Vol. 49, nr 1
72-74
PL
Przedstawiono próbę wyznaczenia energetycznego rozkładu gęstości pułapek powierzchniowych na górnej powierzchni granicznej dielektryk-półprzewodnik struktur SOI (diod PIN z bramką oraz tranzystorów MOS) za pomocą trójpoziomowej metody pompowania ładunku. Otrzymane wyniki zweryfikowano poprzez porównanie z rezultatami charakteryzacji dwupoziomową metodą pompowania ładunku.
EN
This paper presents for the first time the results of 3-level chargepumping measurements of SOI structures. Transistors with body contact as well as PIN gated diodes are used in measurements. The aim of these measurements is to provide information on the energy distribution of interface traps at the front Si-SiO2 interface.
2
Content available Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
Głuszko G., Łukasiak L., Kilchytska V., Chung T. M., Olbrechts B., Flandrie D., Raskin J. P.
Journal of Telecommunications and Information Technology
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2007
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nr 3
61-66
EN
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
3
Content available Charge-pumping characterization of FILOX vertical MOSFETs
Głuszko G., Łukasiak L., Ashburn P.
Journal of Telecommunications and Information Technology
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2007
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nr 3
73-77
EN
This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.
4
Content available Characterization of SOI MOSFETs by means of charge-pumping
Głuszko G., Szostak S., Gottlob H., Lemme M., Łukasiak L.
Journal of Telecommunications and Information Technology
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2007
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nr 3
67-72
EN
This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface.
5
Content available Arbitrary waveform generator for charge-pumping
Iwanowicz M., Pióro Z., Łukasiak L., Jakubowski A.
Journal of Telecommunications and Information Technology
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2007
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nr 3
78-83
EN
The paper presents a new signal generator for charge-pumping. Modular structure of the generator is discussed with special emphasis on signal-generation module consisting of five independent signal channels. Digital signal synthesis is chosen to minimize inaccuracies. Noise analysis is performed to demonstrate the validity of the design of signal channel. Calibration procedure is also discussed.
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