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Quantitative mobility spectrum analysis (QMSA) in multi-layer semiconductor structures

Antoszewski J., Faraone L.

Opto-Electronics Review

2004

Vol. 12, No. 4

347-352

For modern semiconductor heterostructures containing multiple populations of distinct carrier species, conventional Hall and resistivity data acquired at a single magnetic field provide far less information than measurements as a function of magnetic field. However, the extraction of reliable and accurate carrier densities and mobilities from the field-dependent data can present a number of difficult challenges, which were never fully overcome by earlier methods such as the multi-carrier fit, the mobility spectrum analysis of Beck and Anderson, and the hybrid mixed-conduction analysis. More recently, in order to overcome the limitations of those methods, several research groups have contributed to development of the quantitative mobility spectrum analysis (QMSA), which is now available as a commercial product. The algorithm is analogous to a fast Fourier transform, in that it transforms from the magnetic field B domain to the mobility ž domain. QMSA converts the field-dependent Hall and resistivity data into a visually-meaningful transformed output, comprising the conductivity density of electrons and holes in the mobility domain. In this article, we apply QMSA to both synthetic and real experimental data that are representative of modern semiconductor structures.

Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. I. The model

Czyszanowski T., Wasiak M., Nakwaski W.

Optica Applicata

2001

Vol. 31, nr 2

313-323

Some design modifications and optimization of the GaAs/(AlGa)As separate-confinement-heterostructure (SCH) as well as graded-index separate-confinement-heterostructure (GRIN-SCH) semiconductor lasers to reduce their room-temperature (RT) thresholds are discussed. To this end, a detailed optical model of arsenide diode lasers is developed and used to compare the impact of some structure details on RT lasing thresholds. In the model presented in the first part of the paper, both optical gain and losses are modeled rigorously. Optical fields within complex multi-layered structures of the SCH lasers are found using the downhill method. Threshold carrier concentrations are determined from the general balance of radiation gain and losses. As a result of the simulation, recommended basic design parameters for the above structures are deduced in the second part of the paper.