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Structural disturbances of near-surface areas in silicon solar cell modified by P+ ion implantation and thermal treatment

Bonarski J. T., Zehetbauer M., Swiatek Z., Fodchuk I. M., Kopacz I., Bernstorff S., Amenitsch H.

Opto-Electronics Review

2000

Vol. 8, No. 4

323-327

Structural changes of <001> - oriented Si-single crystal platelets after P+ ion implantation and subsequent thermal treatment were analysed by means of diffraction methods using the synchroton radiation with energy of 8 keV. Ion implantation was preceded by P and B diffusion processes to generate n-p junction and BSF (back sufrace field). The results obtained for such monocrystalline Si with a buried amorphised layer permitted to estimate the structural changes caused by the process of the layer formation. Analysis of the diffraction line profiles as well as of the pole figures showed that the crystal regions in the near-surface layer experienced certain misorientations. Both the effective depth of a strongly defected region, and the stress distribution in the sub-surface area were determoned. The evaluation of the diffraction patterns allowed estimating the widths of the amorphised layer and of the transition zone between the amorphised region and the bulk. Moreover, the static Debye-Waller coefficient L and the diffusion loss parameter d were calculated. The above structure parameters are compared with those for conventional Si solar cells (without structural modification).