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Properties and benefits of fluorine in silicon and silicon-germanium devices

Ashburn P., El Mubarek H. A. W.

Journal of Telecommunications and Information Technology

2007

nr 2

57-63

This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is shown to have many beneficial effects in polysilicon emitter bipolar transistors, including higher values of gain, lower emitter resistance, lower 1/f noise and more ideal base characteristics. These results are explained by passivation of trapping states at the polysilicon/silicon interface and accelerated break-up of the interfacial oxide layer. Fluorine is also shown to be extremely effective at suppressing the diffusion of boron, completely suppressing boron transient enhanced diffusion and significantly reducing boron thermal diffusion. The boron thermal diffusion suppression correlates with the appearance of a fluorine peak on the SIMS profile at approximately half the projected range of the fluorine implant, which is attributed to vacancy- fluorine clusters. When applied to bipolar technology, fluorine implantation leads to a record fT of 110 GHz in a silicon bipolar transistor.

Photosensitive macroporous silicon based structures

Pačebutas V., Grigoras K., Jasutis V., Kačiulis S., Mickevičius S., Sabataityte J., Snitka V., Šimkiene I.

Opto-Electronics Review

2000

Vol. 8, No. 4

388-392

Macroporous silicon prepared in n-type silicon have been used for a photosensitive device formation. Boron-doped spun-on layer was applied for p+ emitter formation of the devices. The obtained structures were investigated by AFM and electron microscopy, photosensitivity and the photocurrent spectra were measured to evaluate the influence of porous layer and boron diffusion conditions. Unusually fast boron diffusion through the porous emitter was investigated, stipulating the p+ -n junction to be positioned 2.5 µm deeper the pores bottom. This effect was explained by a presence of local electric fields, caused by tensions present at the border between PS layer and crystalline substrate and by possible deeper nanoporous structure, what was partially proofed by AFM.