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Combined thermal diffusion-ion implantation fabrication processing for silicon solar cells

Kreinin L., Bordin N., Eisenberg N., Grigorieva G., Zviagina K., Kagan M.

Opto-Electronics Review

2000

Vol. 8, No. 4

317-322

Combined fabrication technology utilises the advantages of both thermal diffusion and ion implantation. Thermal gas phase diffusion of phosphorous results in a high quality emitter. Ion implantation as a doping process for back p-p+ barrier formation can be technically optimal and economically effective, despite the costlier nature of ion implantation. Some of the distinct advantages of ion implantation are: controllability, doping uniformity, reproducibility, elimination of some high temperature operations such as protective oxide growth and several wet stages. As a result, the fabrication process is significantly simpler and should provide higher yields, probably at a lower cost, to which the contribution of the ion implantation stage is estimated as 11-13 cents/W. Initially, combined thermal diffusion-ion implantation technology was developed at KVANT for space cell production. Different types of solar cells have been designed, produced and successfully used for the space program : transparent, infrared reflective, bifacial and high resistivity silicon solar cells. Processing has since been improved for application for terrestrial cell fabrication. Samples of terrestrial cells with relatively thick (0.5 - 0.7 µm) passivated low doped emitters demonstrate close to 100% collection of carriers generated by short wavelength light. Internal quantum efficiency in the long wavength range is very high when solar cells are made from FZ silicon and appreciably lower when the starting materials is multicrystalline silicon. Bifacial structures fabricated on FZ substrates by improved processing have a current symmetry factor of 0.7-0.9, which is due to retention of the bulk diffusion length at a level of 600-900 µm. The bifacial structure on multicrystalline substrates is much less effective due to low bulk diffusion length (~130 µm).