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1

Application of Al2O3, ZnO, and TiO2 ALD thin films as antireflection coating in the silicon solar cells

Szindler Marek, Szindler Magdalena

Opto-Electronics Review

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2023

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Vol. 31, No. 4

art. no. e148223

EN

The article describes the results of a research on the surface morphology and optical properties of Al₂O₃, ZnO, and TiO₂ thin films deposited by atomic layer deposition (ALD) for applications in silicon solar cells. The surface topography and elemental composition were characterised using a scanning electron microscope, and thickness was determined using an optical reflectometer. The samples were structurally examined using a Raman spectrometer. The structural variant was identified: for Al₂O₃ it is sapphire, for TiO₂ it is anatase, and for ZnO it is wurtzite. Possibilities of minimising light reflection using single and double thin film systems below 5% were presented. For the first time, the effectiveness of these thin films on the current-voltage characteristics and electrical parameters of manufactured silicon solar cells was examined and compared. The solar cell with the highest efficiency of converting solar radiation into electricity was obtained for Al₂O₃/TiO₂ and the efficiency of such a photovoltaic device was 18.74%.

2

The Al₂O₃/TiO₂ double antireflection coating deposited by ALD method

Szindler Marek, Szindler Magdalena M., Orwat Justyna, Kulesza-Matlak Grażyna

Opto-Electronics Review

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2022

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Vol. 30, No. 3

art. no. e141952

EN

Al₂O₃/TiO₂ thin films were deposited onto monocrystalline silicon surfaces using an atomic layer deposition. Their surface morphology and optical properties were examined for their possible use in solar cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness was measured using a spectroscopic reflectometer. The refractive index and the reflection characteristics were determined. First, the optical properties of the Al₂O₃ thin filmand its influence on recombination in the semiconductor were examined. In this way, it can fulfil a double role in a solar cell. Since reflection reduction was only achieved in a narrow range, it was decided to use the Al₂O₃/TiO₂ system. Thanks to this solution, the light reflection was reduced in a wide range (even below 0.2%).

3

Pulsed laser deposition of ZnO and MoO3 as reflection prohibitors on photovoltaic cell substrate to enhance the efficiency

Selvan P., Jebaraj D. J. J., Hynes N. R. J.

Journal of Achievements in Materials and Manufacturing Engineering

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2022

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Vol. 113, nr 2

65--71

EN

Purpose: With the ever-growing demand for conventional fuels, the improvement in the efficiency of the photovoltaic system is the need of the hour. Antireflection coatings enhance the availability of solar power by reducing the percentage of light reflected. A new coating has been developed to improve the solar cell's overall efficiency. This study focuses on enhancing the efficiency of the monocrystalline solar cell when a coating of ZnO-MoO3 is applied at a certain thickness. Design/methodology/approach: A layer of ZnO followed by MoO3 is deposited on a Silicon solar cell substrate using a Pulsed Laser Deposition process. Due to the transmissivity d between the two materials, they act as excellent antireflection coating. The layer thickness has been engineered to lie in the maximum absorption spectrum of monocrystalline silicon solar cells, which is between 400 and 800 nanometers. Findings: Based on the calculation of transmissivities for a given layer thickness of coating material, the coating has been done, and the efficiencies of the coated specimen were compared with the uncoated solar cell. The percentage improvement in the electrical efficiency of a single crystalline silicon solar cell with an anti-reflection coating at 1059 W/m2 is about 35.7%. Research limitations/implications: Among the available antireflection coating materials, the combination that provides better efficiency when coated on top of a solar cell is hard to find. Practical implications: This anti-reflection coating could be a better solution to enhance the overall efficiency of the single crystalline silicon solar cell. Originality/value: Although ZnO and MoO3 coatings have been investigated separately for improvement in solar cell efficiency with varying levels of success, the hybrid coating of ZnO/MoO3 with a performance enhancement of 35.7% is a great leap.

4

Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells

Szindler Marek, Szindler Magdalena M.

Opto-Electronics Review

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2021

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Vol. 29, No. 4

181--186

EN

The technology of manufacturing silicon solar cells is complex and consists of several stages. The final steps in succession are the deposition of antireflection layer and discharge contacts. Metallic contacts are usually deposited by the screen printing method and then, fired at high temperature. Therefore, this article presents the results of a research on the effect of heat treatment on the properties of the Al2O3 thin film previously deposited by the atomic layer deposition method. It works well as both passivating and antireflection coating. Moreover, heat treatment affects the value of the cell short-circuit current and, thus, its efficiency. The surface morphology, optical and electrical properties were investigated, describing the influence of heat treatment on the properties of the deposited layers and the manufactured solar cells.

5

Influence of Chirped DBR Reflector on the Absorption Efficiency of Multi-nanolayer Photovoltaic Structures: Wavelength-scale Analysis by the Method of Single Expression

Baghdasaryan H., Knyazyan T., Hovhannisyan T., Mardoyan G., Marciniak M., Benson T.

Journal of Telecommunications and Information Technology

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2017

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nr 3

99--106

EN

An electromagnetic wavelength-scale analysis of the optical characteristics of multi-nanolayer photovoltaic (PV) structures: without an antireflection coating, with an antireflection coating on the top of the structure, and with both the antireflection coating on the top and a broadband non-periodic (chirped) distributed Bragg reflector (DBR) on the bottom of the structure is performed. All the PV structures studied are based on a Si p-i-n type absorber supported by a metallic layer (Cu) and SiO2 substrate. The top-to-bottom electromagnetic analysis is performed numerically by the method of single expression (MSE). Absorbing and reflecting characteristics of the multi-nanolayer PV structures are obtained. The influence of the thicknesses and permittivities of the layers of the PV structures on the absorbing characteristics of the structures is analyzed to reveal favourable configurations for enhancement of their absorption efficiency. The localizations of the electric component of the optical field and the power flow distribution within all the PV structures considered are obtained to confirm an enhancement of the absorption efficiency in the favorable configuration. The results of the electromagnetic wavelength-scale analysis undertaken will have scientific and practical importance for optimizing the operation of thin-filmmulti-nanolayer PV structures incorporating a chirped DBR reflector with regards to enhancing their efficiency.

6

Comparison of surface morphology and structure of Al2O3 thin films deposited by sol-gel and ALD methods

Szindler M., Szindler M. M., Pawlyta M., Jung T., Dobrzański L. A.

Journal of Achievements in Materials and Manufacturing Engineering

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2017

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Vol. 82, nr 2

49--57

EN

Purpose: of this research was examination Al2O3 thin film obtained with two different method, by sol-gel and ALD, and comparison the surface morphology and structure of deposited thin films. The films deposited on the monocrystalline silicon were tested for their suitability for use in silicon solar cells. Design/methodology/approach: Trimethylaluminum (TMA) was used as a precursor of Al2O3 which is reacted with water enabled the deposition of thin films by ALD method. By the sol-gel method the aluminium tri-sec butoxide (TBA) was used as a precursor to obtain Al2O3 thin films. The aluminium oxide solutions prepared by sol-gel method were deposited by spin coating technique. Examination of the structure and morphology of the surface of the Al2O3 thin films deposited by sol gel and ALD method were performed using atomic force microscope and transmission electron microscope. For the analysis of surface topography deposited thin films atomic force microscope XE-100 from Park Systems was used. Qualitative analysis of the chemical composition was carried out using an energy dispersion spectrometer (EDS). The detailed structural studies were conducted using a Titan 80-300 scanning-transmission electron microscope S/TEM from the FEI Company. Detailed research on the structure of the deposited Al2O3 thin films were performed. The HRTEM images and diffraction SAED were recorded. Findings: The small atoms clusters of a width less than 20 nm were documented. The thin film deposited by spin-coating technique on silicon substrate with 3000 rpm is characterized by RMS and Ra values of, respectively, 0.26 and 0.2 nm. RMS was defined as rough mean square parameter and Ra was defined as the arithmetic mean deviation of the profile from the mean line. An analysis of the frequency histograms of irregularities of the thin film obtained by the spin coating on a silicon substrate at 3000 rpm shows that a large part of them does not exceed 0.5 nm, and the single irregularities reach up to 2.2 nm. When comparing the AFM pictures with the thin films deposited by ALD technique and spin-coating it has been found that the thin films obtained on polished silicon substrates are similar in morphology. The EDS spectra shows the characteristic for oxygen (0.525 keV) and aluminum (1.486 keV) reflections derived from the thin film. In Al2O3 thin film obtained by ALD method the occurrence of α phase of aluminum oxide with a hexagonal structure was identified, just like in the case of thin film deposited by sol-gel. Practical implications: Known aluminium oxide properties and the possibility of obtaining a uniform thin layer show that it can be good material for different application. Precise description of the properties of Al2O3 is very important, since this material is one of the most frequently used in catalyst industry, in medicine, electronics and photovoltaics, as well as a protective layer. The Al2O3 thin film can act as passive and anti-reflective layer simultaneously in silicon solar cell. Using this thin film can simplify the technology of manufacturing silicon solar cells Originality/value: The paper presents researches of aluminium oxide thin films deposited by sol-gel and atomic layer deposition method on monocrystalline silicon.

7

Chemical resistance of SiO2 layers obtained by the sol–gel technique on a glass substrate

Nocuń M, Środa M, Ciecińska M

Optica Applicata

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2015

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Vol. 45, nr 1

125—134

EN

The paper analyses the influence of heat treatment parameters on SiO2 coatings obtained by the sol–gel technique. Their adhesion to the glass substrate and corrosion resistance were studied. The changes in thickness and porosity with the firing temperature and time of sintering for the systems of 1, 2 and 3 layers in case of SiO2 layers were studied. It was shown that the sufficient durability of the SiO2 coating on the glass substrate can be achieved only by the appropriate selection of thermal treatment parameters. The results confirmed that higher sintering temperature is required for multilayer systems, as compared with a one-layer system.

8

Sol gel TiO2 antireflection coatings for Silicon solar cells

Dobrzański L.A., Szindler M.

Journal of Achievements in Materials and Manufacturing Engineering

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2012

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Vol. 52, nr 1

7--14

EN

Purpose: The aim of this paper was to investigate changes in surface morphology and optical reflection of thin films of titanium dioxide. Thin films were prepared using sol gel spin coating method. Design/methodology/approach: The microanalysis have been investigated by the Energy-dispersive X-ray spectroscopy EDS. The changes in surface topography was observed by the atomic force microscope AFM and scanning electron microscope SEM. The results of roughness have been prepared in the software XEI Park Systems and optical reflection by the spectrometer UV/VIS. Findings: Results and their analysis allow to conclude that the titanium isopropoxide concentration in solution and spin speed, which is an important factor in spin coating technology has a significant influence on surface morphology and optical reflection of thin films titanium dioxide. Practical implications: Known sol gel titanium dioxide optical parameters and the possibility of obtaining a uniform thin films show that it can be good material for photovoltaic application. Originality/value: The paper presents some researches of titanium dioxide thin films deposited by sol gel spin coating method on monocrystalline silicon.

9

Sol-gel and ALD antireflection coatings for silicon solar cells

Dobrzański L. A., Szindler M.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 8

125-127

EN

This paper presents the possibility of using sol-gel and atomic layer deposition (ALD) methods for obtaining antireflection coatings for the silicon solar cells. The surface topography and reflection was studied using an atomic force microscope (AFM) and a spectrometer UV/VIS.

PL

W artykule przedstawiono możliwość zastosowania metod zol-żel oraz atomowego osadzania warstw do otrzymywania warstw antyrefleksyjnych stosowanych w krzemowych ogniwach słonecznych. Topografię powierzchni oraz odbicie optyczne badano przy użyciu mikroskopu sił atomowych oraz spektrometru UV/VIS.

10

Warstwa azotku krzemu jako warstwa antyrefleksyjna i pasywujaca dla krzemowych ogniw słonecznych

Lipiński M.

Elektronika : konstrukcje, technologie, zastosowania

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2011

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Vol. 52, nr 4

62-66

PL

Przedmiotem pracy jest warstwa azotku krzemu spełniająca rolę warstwy antyrefleksyjnej i pasywującej w krzemowym ogniwie słonecznym. Pokazano również, ze warstwy SiNx o dużej gęstości osadzone metodą LF PECVD są bardziej odpowiednie dla ogniw słonecznych niż osadzone metodą RF PECVD. Zastąpienie warstw TiOx przez warstwy SiNx zwiększyło sprawność ogniw o 11,9%.

EN

The paper deals with silicon silicon nitride layers for silicon solar cells application. The silicon layer is deposited by RF and LF PECVD methods. It was shown that high density SiNx layer deposited by LF PECVD are more suited for solar cells than layers deposited by RF PECVD method. The efficiency of solar cells was increased about 11.9% by replacing TiOx ARC by LF PECVD SiNx ARC.

11

The influence of surface texture and temperature deposition of TiO2 layer on crystalline silicon solar cells parameters

Panek P., Drabczyk K., Czternastek H., Kusior E., Zięba P., Bełtowska-Lehman E.

Archives of Metallurgy and Materials

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2008

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Vol. 53, iss. 1

103-106

EN

In the present work, the investigation of the titanium dioxide (TiO2) thin layer as an antireflection coating for silicon solar cells are presented. The TiO 2 layers were obtained by the chemical vapour deposition method using tetracthylorthotitanat (C2H5 O)Ti at temperatures of the silicon wafers in the range from 150°C to 400°C. It has been established that all of the obtained TiO 2 layers contain anatase phase embedded in the amorphous background. A progress of the crystallization process with the increasing temperature of the substrate during the deposition has been observed. The change in opto-electronic parameters of silicon solar cells as a function of the deposition temperature of the antireflection coating has been discussed, taking into account the evolution of the crystallographic structure.

PL

Praca przedstawia wyniki badań poświęconych zastosowaniu cienkich warstw TiO2 jako powłok antyrefleksyjnych dla krzemowych ogniw słonecznych. Warstwy TiO2 wytwarzano metodą chemicznego osadzania z fazy gazowej (CVD) ze irOdla ortotytanianutetraetylu (C 2H5 O)Ti w zakresie temperatur płytek krzemowych od 150°C do 400°C. Stwierdzono, że wszystkie otrzymane warstwy TiO2 charakteryzowały się amorficzną strukturą z wbudowaną fazą anatazu. Zaobserwowano zwiększenie udziału fazy krystalicznej ze wzrostem temperatury krzemowego podłoża. Określono i przedyskutowano zmiany wartości parametrów opto-elektronicznych krzemowych ogniw słonecznych w funkcji temperatury osadzania warstw antyrefleksyjnych Ti02.

12

Optimisation of multilayers antireflection coating for solar cells

Lipiński M., Mroczyński R.

Archives of Metallurgy and Materials

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2008

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Vol. 53, iss. 1

189-192

EN

In the work the optimization of Si0 2 -SiN, and Si02-SiNxt-SiNx2 multilayer antireflection coatings deposited by RF-PECVD is presented. The computer simulation was carried out for planar and textured Si surfaces as well. It was shown that double layer Si02 -SiN, can improve the short circuit current Jsc about 1.8% for planar surfaces. The improvement for textured surfaces is equal about 0.8%. The predictions have been experimentally verified with multi-crystalline silicon solar cells electrical parameters. The highest short circuit current (30.17 mA/cm 2 ) and conversion efficiency (13.84%) were obtained for solar cell with double layer AR coating. For triple AR coating the open circuit voltage was the highest (600 mV) which can be explained by better surface passivation. However, the short circuit current (29.79 mA/cm 2 ) was lower in comparison with double AR coating due to higher absorption of this layer.

PL

Przedstawiono wyniki optymalizacji podwójnej i potrójnej SiO2-SiNx i potrójnej SiO2SiNx1-SiNx2 warstwy anty-refleksyjnej osadzanej metodą RF PECVD. Komputerowe symulacje wykonano zarówno na planarnych jak i teksturowanych powierzchniach płytek krzemowych. Pokazano, że warstwy SiO2-SiNx mogą zwiększyć prąd zwarciowy o 1.8% dla płaskiej powierzchni krzemu. Dla teksturowanej powierzchni krzemu wzrost przewidywany wzrost prądu zwarciowego wynosi 0.8%. Wyniki symulacji zostały zweryfikowane z elektrycznymi parametrami krzemowych ogniw słonecznych wykonanych z krzemu multi-krystalicznego. Najwyższe wartości prądu zwarciowego (30.17 mA/cm 2 ) i sprawności konwersji (13.84%) uzyskano dla podwójnej warstwy AR. Dla potrójnej warstwy AR uzyskano najwyższą wartość napięcia obwodu otwartego Voc(600 mV). Jest to efekt poprawy pasywacji powierzchni przez te warstwy. Jednakże, prąd zwarciowy (29.79 mA/cm 2 ) byl niższy w porównaniu z ogniwem z warstwą podwójną w wyniku wyższej absorpcji tej warstwy.

13

Optical and microstructural properties of granded porous silicon layer

Lipiński M., Czternastek H., Sokołowski M., Panek P.

Archives of Metallurgy and Materials

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2005

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Vol. 50, iss. 2

387-393

EN

In this work we present the results of investigations of porous silicon (PS) layers for solar cells application. The PS was formed by chemical etching (stain etching) of n+-p Si substrate in a solution of HF, HNO3 and H2O. The dielectric response of a PS layer was modeled using a Bruggeman effective-medium approximation. It was shown that PS layer could be described by a model of graded layer with effective optical constants n(eff) and k(ef f) changing from these of bulk material (silicon) to these of surrounding (air). The porosity of the PS layer changed from 10% near the bulk silicon region to nearly 85% at the silicon-air interface. The effective reflectance of Cz-Si surface decreased to about 5% after PS layer formation.

PL

Przedstawiono wyniki badań własności optycznych i mikrostrukturalnych gradientowej warstwy z porowatego krzemu naniesionej metodą chamicznego trawienia. Podłożem były płytki polerowanego krzemu typu p z uformowanym złaczem n+-p. Do symulacji własności wynikających z istniejącego gradientu założono wielowarstwową strukturę porowatego krzemu stosując przybliżenie Bruggeman’a efektywnego ośrodka. Określono wartości współczynnika załamania i ekstynkcji (neff i keff) w warstwie porowatego krzemu w funkcji długosci fali światła oraz odległoćci od powierzchni krzemowego podłoża. Porowatość zmieniała się w granicach od 10% w pobliżu granicy podłoże-krzem porowaty do około 85% na granicy krzem porowaty-powietrze. Efektywny współczynnik odbicia dle krzemu z naniesiona warstwa porowatego krzemu wynosił tylko 5% w porównaniu z 25% wartoscią współczynnika odbicia od steksturyzowanej w KOH powierzchni multikrystalicznego krzemu.

14

Optimisation of SiNx:H layer for multicrystalline silicon solar cells

Lipiński M., Zięba P., Jonas S., Kluska S., Sokołowski M., Czternastek H.

Opto-Electronics Review

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2004

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Vol. 12, No. 1

41--44

EN

Amorphous hydrogenated silicon nitride (a-SiNx:H) films were prepared by a plasma–enhanced chemical vapour deposition in a conventional direct plasma reactor operating at 13.56 MHz using a mixture of the silane (SiH₄) and ammonia (NH₃). The reflectance of SiNx films deposited onto Cz-Si polished wafers substrates was measured in the range of 300–1200 nm. The wavelength dependence of the refractive index n and the extinction coefficient k was determined by fitting a Cauchy model to the experimental reflectance. The influence of the flow NH₃/SiH₄ ratio on the optical constant n and k of SiNx films is presented. An optimisation of the antireflection coating on the flat and texturised substrate for encapsulated and non-encapsulated solar cells was performed using the SUNRAYS program.

15

Porous silicon in solar cell structures

Yerokhov V., Melnyk I., Tsisaruk A., Semochko I.

Opto-Electronics Review

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2000

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Vol. 8, No. 4

414-417

EN

The purpose of the present paper was technology development of generation of efficient and cost - effective porous silicon (PS) based antireflection coating (ARC), which would be the best adapted to the silicon solar cell (SC) processing sequence. Owing to optimisation of anodisation process conditions an average reflection coefficient of PS in the range of 400-1000 nm was decreased to 7.59% for porous layers, grown on a polished surface, and to 1.72% for layers that were grown on textured surface. Minimisation of optical losses allowed improving short circuit current by over than 50% for mono- and multicrystalline SC that had PS based ARC formed on the frontal surface. Under this, the increment of efficiency of these SCs was 31% and 22%, correspondingly. However, the revealed decrease in the SC open-circuit voltage with PS layer by 2.5% gives the evidence on insufficient improvement and stabilisation of passivating properties of the porous layer.

16

Influence of porous silicon on parameters of silicon solar cells

Lipiński M., Panek P., Bielańska E., Węgłowska J., Czternastek H.

Opto-Electronics Review

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2000

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Vol. 8, No. 4

418-420

EN

The silicon solar cells with PS /n+/ p-Si structure (PS - porous Si) have been realised. Porous silicon obtained by stain etching or by electrochemical etching on standard alkaline textured surface has reduced effective reflectance coefficient to about 3% in a wavelength range of 400-1000 nm. Improved performance of solar cells due to formation of PS layer on the top surface between grid fingers has been demonstrated. Increases in efficiency of more than 25% have been achieved. In one chemical process antireflection coating as well as the selective emitter could be simultaneously obtained.