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Nonlinear dependence of optical gap of a-Si₁-xGex:H films on Ge content (x<0.4)

Dimova-Malinovska D.

Opto-Electronics Review

2000

Vol. 8, No. 4

382-384

The dependence of optical band gap of a-Si₁-xGex:H films on Ge content is discussed. The films are deposited by magnetron co-sputtering of c-Si target with c-Ge chips on it in Ar + H₂ atmosphere. It has been observed that concentration of the bondeh hydrogen decreases with Ge content in the films. The results of study show that variation of the optical band gap of a-Si₁-xGex:H films on Ge concentration follows the nonlinear law. This is related to the nonlinear changes of H concentration in the films.