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Mechanical flexibility and electrical reliability of ZnO-Al thin films on polymer substrates under different external deformation

Mohammed Dilveen W.

Advances in Materials Science

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2024

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Vol. 24, nr 1(79)

32--45

EN

Aluminum-doped zinc oxide (AZO) films have emerged as promising transparent electrodes for various optoelectronic applications due to their superior transparency, electrical conductivity, and cost-effectiveness compared to indium tin oxide (ITO). Despite their widespread use, investigations into the electromechanical properties of AZO films, especially under various mechanical deformations, remain limited. This study employs RF magnetron sputtering to deposit AZO films on polyethylene naphthalate (PEN) substrates and explores their mechanical behavior through uniaxial tensile fragmentation and bending tests, coupled with in-situ optical microscopy. Changes in electrical resistance of AZO films were monitored in situ during deformation. Fatigue behavior was examined to further understand mechanical failure, and SEM was used for surface characterization. A critical strain of about 3.1 percent was detected during uniaxial tensile testing, marking the onset of cracks in AZO-coated PEN. In contrast to thicker films, thinner films demonstrated improved stretchability beyond the initiation of crack onset strain. Tension and compression bending tests revealed that the material has excellent bendability, as shown by its critical radii of 5.4 mm and 3.9 mm, respectively. The bending reliability of AZO films under compression was found to be superior than that under tension. Bending fatigue experiments demonstrated that AZO films could withstand cyclic stress without experiencing noticeable cracks after 100 cycles and with very minor resistance change. This study contributes to the creation of more reliable and optimized flexible optoelectronic devices by giving substantial quantitative data on the performance of AZO films when exposed to mechanical stress.

2

The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering

Zdyb A., Krawczak E., Gułkowski S.

Opto-Electronics Review

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2018

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Vol. 26, No. 3

247--251

EN

Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes’ coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al₂O₃. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.

3

Wykorzystanie ZnO w charakterze warstw TCL ogniw słonecznych nowej generacji

Sibiński M., Znajdek K., Górski M.

Prace Instytutu Elektrotechniki

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2012

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Z. 259

33--34

PL

W ciągu ostatnich lat fotowoltaika wkroczyła na drogę bardzo dynamicznego rozwoju co przekłada się na gwałtowny wzrost wielkości produkcji ogniw słonecznych. Jednocześnie rosnący procent rynku stanowią cienkowarstwowe przyrządy nowej generacji o niskiej cenie i elastycznej konstrukcji. Do pełnego wykorzystania ich zalet w tym potencjalnej elastyczności struktury konieczna jest adaptacja odpowiednich transparentnych warstw przewodzących TCL (ang: Transparent Conductive Layers). Do grupy materiałów o potencjalnych korzystnych właściwościach z punktu wykorzystania w roli elektrody transparentnej należą odmiany tlenku cynku. Prezentowana praca jest poświęcona badaniom właściwości cienkich warstw ZnO:Al wytworzonych metodą PLD (ang: Pulsed Laser Deposition) do zastosowań w charterze transparentnej elektrody przewodzącej elastycznych, cienkowarstwowych ogniw słonecznych. Opis technologii wytwarzania jest uzupełniony o wszechstronną analizę parametrów mechanicznych i optoelektronicznych uzyskanych warstw na podłożach elastycznych i sztywnych. Zaprezentowane są modele numeryczne prototypowych konstrukcji ogniw. Przedstawione są również pierwsze wyniki pomiarów eksperymentalnej konstrukcji ogniwa słonecznego wyposażonego w otrzymaną warstwę.

EN

Rapid development of photovoltaics, which may be recently observed, is transferred to a mass-production scale of PV industry. At the same time constant growth of inexpensive thin-film, flexible devices leads to their significant share in the PV market. However, the potential profits of thin film applications are limited by proper technology and materials adaptation. Important element for most of these devices is a transparent electrode made of appropriate Transparent Conductive Layer (TCL). This paper is dedicated to practical investigation of ZnO:Al layer prepared by Pulsed Laser Deposition (PLD) technology as the emitter electrode of thin film solar cells. The production technology description is detailed and supplemented by mechanical and opto-electrical parameters measurements and simulations. Described layer is prepared and examined on traditional and transparent flexible substrates as well. The concepts and first realization of the new cell structure are given.