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1 Opto-Electronics Review

1 2004

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Linear and nonlinear optical properties of Zn 1-xMgxSe layers grown by MBE and PLD methods

Derkowska B., Wojdyła M., Płóciennik P., Sahraoui B., Bała W.

Opto-Electronics Review

2004

Vol. 12, No. 4

405-409

Ternary and quaternary AII BVI mixing semiconductors are very attractive materials for various optical devices. Their optical properties such as the energy gap, linear refractive index, absorption coefficient and lattice constant can be changed with increasing component. For the practical application linear and nonlinear optical characterizations such as the two-photon absorption (TPA), linear and nonlinear refractive indexes are an important aspect. A practical motivation to measure the magnitude of TPA coefficient is that the performance of a device based on nonlinear refraction is strongly affected by the eventual nonlinear absorption. The refractive index and TPA coefficient of Zn1-xMgxSe compounds grown on glass substrates by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) methods were systematically investigated as a function of Mg composition. The linear optical properties have been studied using transmission, reflection, and photoreflection spectroscopy. The nonlinear optical properties of these materials were investigated by the nonlinear transmission. The energy gap and linear refractive index of these materials change with Mg content, hence the nonlinear optical processes such as TPA and nonlinear refraction index can be modified.