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X-ray diffracting investigation of strain distribution in silicon implanted by phosphorus

Świątek Z., Bonarski J., Ciach R., Fodchuk I. M., Raransky M. D., Gimchinsky O. G.

Opto-Electronics Review

2000

Vol. 8, No. 4

421-425

Research of structural changes in subsurface layers of Si single crystals during formation of amorphous layers hidden under the surface are carried out. It is established that phosphorus ion (with 180 keV energy and a doze of the order of 10¹⁵ ion/cm²) implantation and subsequent short-term temperature annealing at T = 500°C are caused great structural changes in subsufrace areas. The great strains in direction perpendicular to interface are characteristic of structures formed in this way.