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Sputtering pressure influenced structural, electrical and optical properties of RF magnetron sputtered MoO3 films

Subbarayudu S., Reddy K. Venkata Subba, Uthanna S.

Materials Science Poland

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2020

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Vol. 38, No. 1

41--47

EN

MoO3 films were deposited by RF magnetron sputtering technique on glass and silicon substrates held at 473 K by sputtering of metallic molybdenum target at an oxygen partial pressure of 4 x 10-2 Pa and at different sputtering pressures in the range of 2 Pa to 6 Pa. The influence of sputtering pressure on the structure and surface morphology, electrical and optical properties of the MoO3 thin films was studied. X-ray diffraction studies suggest that the films deposited at a sputtering pressure of 2 Pa were polycrystalline in nature with mixed phase of α- and β-phase MoO3, while those formed at sputtering pressure of 4 Pa and above were of a-phase MoO3. Scanning electron micrographs showed a decrement in the size of the particles and their shapes changed from needle like structure to dense films with the increase of sputtering pressure. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic vibration modes of Mo=O, Mo–O and Mo–O–Mo related to MoO3. Electrical resistivity of the MoO3 films decreased from 6.0 x 104 Ωcm to 2 X 104 Ω∙cm with an increase of sputtering pressure from 2 Pa to 6 Pa, respectively. Optical band gap of the films decreased from 3.12 eV to 2.86 eV with the increase of sputtering pressure from 2 Pa to 6 Pa, respectively.

2

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Mantarci Asim, Kundakçi Mutlu

Materials Science Poland

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2019

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Vol. 37, No. 3

454--464

EN

GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

3

The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering

Zdyb A., Krawczak E., Gułkowski S.

Opto-Electronics Review

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2018

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Vol. 26, No. 3

247--251

EN

Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes’ coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al₂O₃. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.

4

RF Magnetron Sputtering Coating Of Hydroxyapatite On Alkali Solution Treated Titanate Nanorods

Lee K., Shin G.

Archives of Metallurgy and Materials

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2015

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Vol. 60, iss. 2B

1319--1322

EN

Hydroxyapatite (HA) is a material with outstanding biocompatibility. It is chemically similar to natural bone tissue, and has therefore been favored for use as a coating material for dental and orthopedic implants. In this study, RF magnetron sputtering was applied for HA coating. And Alkali treatment was performed in a 5 M NaOH solution at 60°C. The coated HA thin film was heat-treated at a range of temperatures from 300 to 600°C. The morphological characterization and crystal structures of the coated specimens were then obtained via FE-SEM, XRD, and FT-IR. The amorphous thin film obtained on hydrothermally treated nanorods transformed into a crystalline thin film after the heat treatment. The change in the phase transformation, with an enhanced crystallinity, showed a reduced wettability. The hydrothermally treated nanorods with an amorphous thin film, on the other hand, showed an outstanding wettability. The HA thin film perpendicularly coated the nanorods in the upper and inner parts via RF magnetron sputtering, and the FT-IR results confirmed that the molecular bonding of the coated film had an HA structure.

5

Effect of substrate temperature on the crystal properties of LiMn2O4 films prepared by RF magnetron sputtering

Isai M., Nakamura K., Hosokawa T., Izumichi T., Sekikawa S.

Journal of Automation Mobile Robotics and Intelligent Systems

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2009

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Vol. 3, No. 4

65-68

EN

The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. The LiMn2O4 powder was used as a target material. The deposition rate, XRD, and surface morphology were investigated as a function of substrate temperature (Tsub). It was found that the deposition rate had a peak at around the of 200 °C. This research was also designed for preventing the target material being oxidized during the reactive sputtering process. A quartz tube was inserted between shutter and target. It seems that the quartz tube is effective to prevent oxidation of target material.