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An accurate prediction of high-frequency circuit behaviour

Yoshitomi S., Kimijima H., Kojima K., Kokatsu H.

Journal of Telecommunications and Information Technology

2005

nr 1

47-62

An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.

Evolution and recent advances in RF/microwave transistors

Liou J.J., Schwierz F.

Journal of Telecommunications and Information Technology

2004

nr 1

99-105

Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.