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Numerical analysis of SiGeSn/GeSn interband quantum well infrared photodetector

Pareek P., Das M. K., Kumar S.

Opto-Electronics Review

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2018

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Vol. 26, No. 2

149--157

EN

In this paper, detailed theoretical investigation on the frequency response and responsivity of a strain bal-anced SiGeSn/GeSn quantum well infrared photodetector (QWIP) is made. Rate equation and continuity equation in the well are solved simultaneously to obtain photo generated current. Quantum mechanical carrier transport like carrier capture in QW, escape of carrier from the well due to thermionic emission and tunneling are considered in this calculation. Impact of Sn composition in the GeSn well on the frequency response, bandwidth and responsivity are studied. Results show that Sn concentration in the GeSn active layer and applied bias have important role on the performance of the device. Significant bandwidth is obtained at low reverse bias voltage, e.g., 200 GHz is obtained at 0.28 V bias for a single Ge0.83 Sn0.17 layer. Whereas, the maximum responsivity is of 8.6 mA/W at 0.5 V bias for the same structure. However, this can be enhanced by using MQW structure.

2

High resolution staring arrays answering compact MW and LW applications

Pistone F., Tribolet P., Vuillermet M.

Opto-Electronics Review

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2006

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Vol. 14, No. 2

113-122

EN

This paper overviews the electro-optical and thermal performances of different types of infrared detectors manufactured by Sofradir. The detector's fabrication processes and detector's performance are shortly described. New staring arrays are more compact and offer system solutions required by infrared market. Special attention is directed to some reliability advantages of new dewar design. Finally, the development trends for highest resolution infrared detector are discussed.

3

Miniaturisation : enabling technology for the new millennium

Razeghi M., Mohseni H.

Opto-Electronics Review

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2001

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Vol. 9, No. 2

101-108

EN

The history of semiconductor devices has been characterised by a constant drive towards lower dimensions in order to increase integration density, system functionality and performance. However, this is still far from being comparable with the performance of natural systems such as human brain. The challenges facing semiconductor technologies in the millennium will be to move towards miniaturisation.The influence of this trend on the quantum sensing of infrared radiation is one example that is elaborated here. A new generation of infrared detectors has been developed by growing layers of different semiconductors with nanometer thicknesses. The resulted bandgap engineered semiconductor has superior performance compared to the bulk material. to enhance this technology further; we plan to move from quantum wells to quantum wire and quantum dots.

4

Device physics and focal plane array applications of QWIP and MCT

Tidrow M. Z., Beck W. A., Clark W. W., Pollehn H. K., Little J. W., Dhar N. K., Leavitt R. P., Kennerly S. W., Beekman D. W., Goldberg A. C., Dyer W. R.

Opto-Electronics Review

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1999

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Vol. 7, No. 4

283-296

EN

Infrared (IR) sensor technology is critical to many commercial and military defense applications. Traditionally, cooled infrared material systems such as indium antimonide, platinum silicide, mercury cadmium telluride (MCT), and arsenic doped silicon (Si:As) have dominated infrared detection. Improvement in surveillance sensors and interceptor seekers requires size, highly uniform, and multicolor IR focal plane arrays involving medium wave, long wave, and very long wave IR (VLWIR) regions. Among the competing technologies are the quantum well infrared photodetectors (QWIPs) based on lattice matched or strained III-V material systems. This paper discusses cooled IR technology with emphasis on QWIP and MCT. Detais will be given concerning device physics, material growth, device fabrication, device performance, and cost effectiveness for LWIR, VLWIR, and multicolor focal plane array applications.