Wyniki wyszukiwania - BazTech

1

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

Voitsekhovskii A. V., Nesmelov S. N., Dzyadukh S. M., Varavin V. S., Dvoretskii S. A., Mikhailov N. N., Sidorov Y. G., Yakushev M. V.

Opto-Electronics Review

|

2010

|

Vol. 18, No. 3

259-262

EN

The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg₁₋xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO₂Si₃N₄ and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

2

Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg₁₋xCdxTe at passivation by epitaxially grown in situ CdTe

Voitsekhovskii A. V., Nesmelov S. N., Dzyadukh S. M., Varavin V. S., Dvoretskii S. A., Mikhailov N. N., Sidorov Y. G., Yakushev M. V.

Opto-Electronics Review

|

2010

|

Vol. 18, No. 3

263-266

EN

The electrical properties of the interface between Hg₁₋xCdxTe (x = 0.22 and x = 0.32-0.36) and CdTe prepared in situ molecular beam epitaxy were estimated at 77 K. The methods of determination of main parameters of interface semiconductor/insulator and insulator from capacitance-voltage characteristics of MIS-structures based on graded-band Hg₁₋xCxTe have been developed. The fixed charge states density, fast surface states density, and density of mobile charge are obtained from capacitance-voltage measurements. For improvement in stable and electrical strength of insulator coating for several samples over CdTe additional protective layers SiO₂-Si₃N₄ are formed for x = 0.22 and ZnTe for x = 0.32-0.36.

3

Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris

Janik T., Jakubowski A., Majkusiak B., Korwin-Pawłowski M.

Journal of Telecommunications and Information Technology

|

2001

|

nr 1

65-69

EN

Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.