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Osadzanie i charakteryzacja cienkich warstw dielektrycznych AlOxNy

Firek P., Veklych A., Sochacki M.

Elektronika : konstrukcje, technologie, zastosowania

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2016

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Vol. 57, nr 10

54--57

PL

W pracy przedstawiono wyniki badań warstw dielektrycznych tlenkoazotku glinu (AlOxNy), wytworzonych metodą reaktywnego osadzania magnetronowego na podłożach krzemowych oraz węgliko-krzemowych. Zbadany został wpływ parametrów technologicznych procesu na najważniejsze parametry elektrofizyczne uzyskiwanych warstw. Redukcja liczby eksperymentów przy użyciu tablic ortogonalnych Taguchi’ego oraz charakteryzacja optyczna i elektryczna struktur MIS (Metal-Isolator-Semiconductor) wytwarzanych na podłożach Si w pierwszej części pracy umożliwiły dokonanie wyboru najkorzystniejszych parametrów procesów osadzania z punktu widzenia docelowych parametrów warstwy dielektrycznej. Pozwoliło to w dalszej kolejności na realizację odpowiednich procesów osadzania na podłożach SiC, które zostały przeanalizowane w drugiej części pracy. Uzyskane wyniki badań wskazały potencjalne zastosowanie warstw dielektrycznych na bazie glinu, które mogą zostać wykorzystane jako warstwy pasywujące w przyrządach wysokonapięciowych.

EN

In this work, the results of investigations of aluminum oxynitride (AlOxNy) dielectric thin films, deposited by reactive magnetron sputtering on silicon and silicon carbide substrates were presented. The main purpose of this work was the development of AlOxNy dielectric thin films and investigation of the influence of deposition parameters on the electrophisical parameters. The use of Taguchi’s orthogonal arrays methods to reduce the number of experiments and the optical and electrical characterization of MIS (Metal-Isolator-Semiconductor) structures on Si in the first part of the work allow the deposition process optimization. Subsequently, mentioned earlier reasons allow to prepare processes based on the SiC substrate analysis of these processes has been presented in the second part of the work.The results of this work show the opportunity of potential applications of the AlOxNy dielectric thin films as passivation layers in the production of high voltage devices.

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Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg₁₋xCdxTe in wide temperature range

Voitsekhovskii A. V., Nesmelov S. N., Dzyadukh S. M.

Opto-Electronics Review

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2014

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Vol. 22, No. 4

236-244

EN

Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg₁₋xCdxTe (x = 0.22−0.23 and 0.31−0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C−V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C−V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

3

Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements

Kochowski S., Drewniak Ł., Nitsch K., Paszkiewicz R., Paszkiewicz B.

Materials Science Poland

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2013

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Vol. 31, No. 3

446--453

EN

In this paper MIS equivalent electrical circuit of Au/Pd/Ti–SiO2–GaAs has been analyzed by a comparison of the results obtained from admittance and DLTS spectroscopy. Two groups of peaks with different magnitude and different gate voltage dependence have been observed in DLTS and admittance spectra. Based on the analysis of the peaks behavior, it has been concluded that they are associated with the response of bulk traps and interface states, respectively. In order to characterize bulk traps and interface states responsible for the occurrence of two groups of peaks in normalized conductance spectra we have used the equivalent circuit with two CPE-R branches. The time constant values estimated for both peaks from admittance analysis have been compared with the time constant determined from DLTS analysis. Some discrepancies have been noted between the time constants obtained for interface states whereas the time constants for bulk traps were compatible. It has been also demonstrated that when conductance peaks overlap, the admittance experimental data can be fitted by the equivalent electrical model with only one CPE-R branch. However, in this case incomplete information about the analyzed process has been obtained despite the fact that all model validity criteria can be fulfilled and the model seems to be correct.

4

Efekty polowe w warstwach tlenkowych

Olesik J.

Elektronika : konstrukcje, technologie, zastosowania

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2013

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Vol. 54, nr 3

85-89

PL

W pracy badano właściwości emisyjne cienkich i domieszkowanych warstw In₂O₃ i SnO₂ (ITO). Warstwy tlenkowe były nałożone na podłoża szklane i poddane działaniu pola elektrycznego i światła UV. Badano wtórną emisję elektronów sterowaną polem elektrycznym oraz połowo indukowaną emisję elektronową. Natężenie pola elektrycznego wewnątrz emitera było rzędu 1 MV/m. Polowe zjawiska emisyjne bazują na efekcie Maltera. Metoda emisji indukowanej polem polega na analizie widma impulsów napięciowych z powielacza elektronowego. Wyznaczono wydajność emisyjną i rozkłady energetyczne elektronów w zależności od natężenia pola elektrycznego wewnątrz emitera, grubości warstwy ITO oraz oświetlenia. Wyjaśniając mechanizm tych zjawisk podano główne założenia polowego rozdziału warstwy ITO na strefę zubożoną i wzbogaconą w nośniki ładunku. Zaproponowano fenomenologiczny model zjawisk emisyjnych uwzględniający cztery typy mechanizmów emisji elektronowej wywołanej działaniem pola elektrycznego oraz efektami powierzchniowymi i objętościowymi.

EN

In this work, emission properties of thin and doped In₂O₃ and SnO₂ layers (ITO) have been studied. The films were deposited on a glass substrate and exposed to electric field and UV light. The studied emission phenomena were: field induced secondary electron emission and field induced electron emission. Electric field inside the emitter was of the order of 1 MV/m. The field induced electron emission (FIEE) is based on Malter effect. The FIEE measurements relied on determination and analysis of voltage pulse amplitude spectra from a photomultiplier. Emission yield and electron energy distributions as a function of field intensity in the emitter, the ITO thickness and UV illumination have been determined. A phenomenological model of the investigated phenomena has been suggested which includes four types of emission mechanisms: an ordinary one (induced exclusively by electric field) and another caused mainly by surface, volume and tunnel effects.

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Certain effects of field and light induced electron emission from indium thin oxide (ITO) layers

Olesik J.

Optica Applicata

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2005

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Vol. 35, nr 3

485-494

EN

Indium thin oxide (ITO) layers were deposited onto both surfaces of a glass substrate. One of the layers was a field electrode and negative voltage has been applied to it in order to create the internal electric field. Another one was treated as the electron-emitting layer. The studies were carried out in the 10-7 hPa vacuum. As a result of applying polarizing voltage Upol and illuminating by a quartz lamp, photoelectrons are released and enter the electron multiplier. Voltage pulses from the multiplier are recorded in the multichannel amplitude analyzer, creating so-called voltage pulse amplitude spectrum. Dependence of electron emission yield on both the intensity of internal field and illumination was measured. With the increasing the Upoi voltage, the count frequency of pulses grows monotonically. At higher Upol (> |-1 kV|) this dependence is exponential. After illuminating the yield of the field induced electron emission grows as well. The cascade multiplication of electrons, which is responsible for the high emission yield, develops under the influence of the electric field of the order of 1 MV/m. The Gauss approximation suggests that the internal electric field in the interface between a glass and ITO layer has to be taken into account.

6

Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure

Kudła A., Przewłocki H., Brzezińska D., Borowicz L.

Journal of Telecommunications and Information Technology

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2005

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nr 1

112-114

EN

We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local phi MS values over the gate area of a single MOS structure. The phi MS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the phi MS value on the exposure time and the power density of UV light is discussed.

7

Analiza elektrycznych własności struktur MIS na bazie GaAs orazSi w oparciu o metodę spektroskopii impedanacyjnej

Kochowski S., Szydłowski M.

Zeszyty Naukowe. Matematyka - Fizyka / Politechnika Śląska

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2004

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z. 91

199-212

PL

Obiektem badań były struktury Au/Pd/Ti-SiO2-GaAs oraz Al-SiO2-Si wykonane na bazie półprzewodników typu p. Wykonano pomiary pojemności i konduktancji struktur w szerokim zakresie częstotliwości i napięć polaryzacji bramki. Pokazano możliwość opisania charakterystyk admitancyjnych struktur w oparciu o układ równoważny. W układzie równoważnym procesy prowadzące do częstotliwościowej dyspersji charakterystyk reprezentowane są przez element stałofazowy (CPE) połączony szeregowo z rezystancją. Dla różnych napięć bramki wyznaczono parametry układu równoważnego oraz stałe czasowe opisujące procesy elektronowe w badanych

EN

The Au/Pd/Ti-SiO2-GaAs and Al-SiO2-Si structu-res both with p-type semiconductors have been investigated. The measurements of the capacitance-voltage characteristics at different frequencies have been performed as well as frequency dependence of MIS capacitance and conductance at fixed gate voltages. The electrical equivalent circuits which allow to describe obtained characteistics in a simple way has been presented. They contain constant phase elements (CPE) in series with resistors. The parameters of these circuits have been estimated at different gate voltages as well as the characteristic time constants, which describe the electron processes res in observed frequency behaviour of admittance characteristics,