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2 Materials Science Poland

2 2008

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Properties and estimated parameters of a submicrometer HSDMAGFET

Kordalski W., Boratyński B., Panek M.

Materials Science Poland

2008

Vol. 26, No. 1

33--43

Main features and predicted values of key parameters of a novel magnetic field sensitive semiconductor device, horizontally-split-drain magnetic field sensitive field effect transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields have been presented. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and the gradual channel detachment effect (GCDE). The predicted relative sensitivity of the sensor can reach as high value as 100 [%/T]. Furthermore, due to its original structure, the spatial resolution of the MAGFET is extremely high, which makes this device particularly useful in reading magnetically encoded data or magnetic pattern recognition. Besides, a novel device related to the HSDMAGFET, namely, horizontally-split-drain current controlled field effect transistor (HSDCCFET) has been presented.

A new drain insulation design in GaAs SD-MAGFET

Boratyński B., Kordalski W., Ściana B., Panek M., Zborowska-Lindert I.

Materials Science Poland

2008

Vol. 26, No. 1

27--21

A new design of a split-drain MAGFET type magnetic sensor based on GaAs MESFET device with a sandwich-like drain configuration has been investigated. An excellent performance of the sensor, namely its high sensitivity and spatial resolution to magnetic field could be obtained as a result of an extremely short (200 nm) distance between the transistor drains realized using a unique epitaxial layer structure. A proper sequence of the AlGaAs/GaAs/AlAs/GaAs epitaxial layers grown by MOCVD technique followed by selective etching process has been proposed and realized. Structural parameters of the layers were studied. Electrical performance of the insulated drain structure was evaluated by measurements of the leakage current that was less than 10 nA for 2 V drain voltage bias difference.