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Investigation of HgCdTe avalanche photodiodes for HOT condition

Manyk Tetiana, Sobieski Jan, Matuszelański Kacper, Rutkowski Jarosław, Martyniuk Piotr

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2024

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Vol. 72, nr 3

art. no. e149173

EN

The performance of long-wave infrared (LWIR) x = 0.22 HgCdTe avalanche photodiodes (APDs) was presented. The dark currentvoltage characteristics at temperatures 200 K, 230 K, and 300 K were measured and numerically simulated. Theoretical modeling was performed by the numerical Apsys platform (Crosslight). The effects of the tunneling currents and impact ionization in HgCdTe APDs were calculated. Dark currents exhibit peculiar features which were observed experimentally. The proper agreement between the theoretical and experimental characteristics allowed the determination that the material parameters of the absorber were reached. The effect of the multiplication layer profile on the detector characteristics was observed but was found to be insignificant.

2

Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response - Operating Under Zero Bias Conditions

Martyniuk P., Kopytko M., Madejczyk P., Henig A., Grodecki K., Gawron W., Rutkowski J.

Metrology and Measurement Systems

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2017

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Vol. 24, nr 4

729--738

EN

The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd = 0.19) HgCdTe detector for 300 K was calculated at a level of τs ~ 1 ns for zero bias condition, while the detectivity - at a level of D* ~ 109 cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+ barrier layer play a critical role in order to reach τs ≤ 1 ns. An extra series resistance related to the processing (RS+ in a range 5-10 Ω) increased the response time more than two times (τs ~ 2.3 ns).

3

Understanding the NEΔT of tactical infrared focal plane arrays

Norton P.

Opto-Electronics Review

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2012

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Vol. 20, No. 3

275-278

EN

NEΔT is the commonly used figure-of-merit for infrared-imaging systems using focal plane arrays (FPAs). This paper discusses an intuitive approach to understanding what determines this value in the majority of MWIR and LWIR broad-band applications, namely, the available charge storage capacity of the FPA readout. This conclusion is a consequence of the negligible amount of dark current compared to photo-current for modern detector technology.

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Linear HgCdTe IR FPA 288 × 4 with bidirectional scanning

Vasilyev V. V., Predein A. V., Varavin V. S., Mikhailov N. N., Dvoretsky S. A., Gumenjuk-Sichevska J. V., Golenkov A. G., Reva V. P., Sabinina I. V., Sidirov Y. V., Susliakov A. O., Sizov F. F., Aseev A. L.

Opto-Electronics Review

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2010

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Vol. 18, No. 3

332-337

EN

The long wavelength (8-12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20-0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4-7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R₀ = 1.6×10⁷ Ω zero bias voltage, which corresponded to R₀A ∼70 Ω •cm² and to the maximal value Rmax = 2.1 × 10⁸ Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers. The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×10⁸ V/W, the detectivity Dλ * = 2.13 × 10¹¹ cm × Hz½ × W⁻¹, and the noise equivalent temperature difference NETD = 9 mK.

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Uncooled microbolometer detector: recent developments at ULIS

Tissot J. L., Trouilleau C., Fieque B., Crastes A., Legras O.

Opto-Electronics Review

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2006

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Vol. 14, No. 1

25-32

EN

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Fire-fighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector. Therefore, to answer these markets, a 35-µm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160x120 and 384x288 arrays production. Besides a wide-band version from uncooled 320x240/45 µm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 µm pixel-pitch detector as well as the wide-band 320x240 infrared focal plane arrays with a pixel pitch of 45 µm.

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Low-noise infrared and visible focal plane arrays

Kozlowski L., Vural K., Luo J., Tomasini A., Liu T., Kleinhans W.E.

Opto-Electronics Review

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1999

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Vol. 7, No. 4

259-269

EN

While charge-coupled device ( CCD ) technology is often perceived to provide nearly optimum signal multiplexing and very low imager noise, coupling high performance detectors ( at cutoff wavelengths from 0.6 žmto 17 um ) to CMOS multiplexers provides lower (<10 e-) read noise at high data rates using several pixel amplifier schemes. This superiority is fundamental and has been validated on infrared and visible focal plane arrays. Thus the robust pixel-based signal amplification facilitated by sub-micron CMOS is stimulating low-noise focal plane array (FPA) development for discriminating applications including infrared astronomy, wavefront sensing, spectroscopy, and spaceborne images. Enabled by Moore's Law and concomitant increases in integration density, commercial imagers for consumer video are also providing very low read noise and high sensitivity. Hence we report the ability to usefully detect quanta at non-cryogenic operating temperatures because read noise is at the single-electron level at high video rates. While such advances are typically first demonstrated on infrared sensors, the enhancements migrate to visible devices as soon as the available lithography of the prevailing silicon CMOS technology permits, because visible imager pixels are necessarily much smaller to match the optical blur.