Wyniki wyszukiwania - BazTech

Ograniczanie wyników

1 Opto-Electronics Review

1 1999

Powiadomienia systemowe

Sesja wygasła!

Znaleziono wyników: 1

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: InSb MIS structure

Sortuj według:

Ogranicz wyniki do:

Characteristics of infrared photodiode using SiO₂ insulator on InSb wafer with p-i-n structure

Cho J. Y., Kim J. S., Son S. H., Lee J. H., Choi S. Y.

Opto-Electronics Review

1999

Vol. 7, No. 4

369-374

A highly sensitivite photovoltaic infrared diode was fabricated for detecting a 3-5 µm wavelength range in an InSb wafer with a p-i-n structure grown by MOCVD. The formation of silicon dioxide (SiO₂) insulator films for the junction interface and surface of the photodiode were prepared using remote plasma enhanced chemical vapour deposition (PECVD) as InSb has a low melting point and evaporation temperature for surface atoms. The structural characteristics of SiO₂ films and electrical characteristics of metal-insulator-semiconductor structures were initially examined. The leakage current density at 1 MV/cm was about 22 nA/cm², the breakdown electric field of the MIS capacitor using SiO₂ film deposited at 105°C was about 3.5 MV/cm, and the interface-state density at the mid-band gap extracted from the 1 MHz capacitance-voltage measurement was about 2x10¹¹ cm⁻² eV⁻¹. Thereafter, the characteristics of the infrared photodiode were examined. The product of zero-bias resistance by area (R₀A) showed 1.56 x 10⁶ Ωcm² and normalized detectivity exhibited about 1x10¹¹ cm⁻² W⁻¹.