Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: HVPE method

Sortuj według:

Ogranicz wyniki do:

Influence of the deposition parameters of nucleation layer on the properties of thick gallium nitride layers

Prażmowska J., Korbutowicz R., Paszkiewicz R., Szyszka A., Podhorodecki A., Misiewicz J., Tłaczała M.

Materials Science Poland

2008

Vol. 26, No. 1

79--85

Gallium nitride layers were grown on sapphire (0001) substrates on low temperature (LT)-GaN layer deposited by the HVPE method. HCl flow rates and deposition times of the nucleation layer were varied in the range of 8-10 cm3/min and 5-9 min (with the step of 2 min), respectively. Morphologies of LTGaN buffer layers and subsequent high temperature (HT)-GaN layers were examined by scanning electron microscopy. Photoluminescence spectra of HT-GaN layers were recorded which allowed us to evaluate the optical quality of thick HVPE HT-GaN layers.

Free-standing non-polar gallium nitride substrates

Maruska H. P., Hill D. W., Chou M. C., Gallagher J. J., Chai B. H.

Opto-Electronics Review

2003

Vol. 11, No. 1

7-17

A review is given of efforts to prepare thick gallium nitride films on lattice-matched γ-LiAlO₂ substrates. Much progress in the design of new high performance nitride device structures is presently impeded by the lack of GaN substrates, leading to large defect concentrations in layers grown on foreign materials. These problems could be alleviated if a true GaN substrate were to become available, allowing homoepitaxial growth. The preparation of 50 mm diameter boules of γ-LiAlO₂ from the melt will be discussed, including wafer preparation. Growth of thick (300-400um)GaN layers on the γ-LiAlO₂ wafers willbe presented. The GaN is deposited by the halide vapour phase epitaxy (HVPE) method. Characteristics of these 50 mm diameter wafers are explained in detail. Much progress has been made, but several problems remain to be overcome.