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1 Journal of Telecommunications and Information Technology

1 2005

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DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content

Durov S., Mironov O. A., Myronov M., Whall T. E., Parker E. H. C., Hackbarth T., Hoeck G., Herzog H. J., König U., Känel von H.

Journal of Telecommunications and Information Technology

2005

nr 1

101-111

Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.