Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Nanophotonic technologies for single-photon devices

Gerardino A., Francardi M., Gaggero A., Mattioli F., Leoni R., Balet L., Chauvin N., Marsili F., Fiore A.

Opto-Electronics Review

2010

Vol. 18, No. 4

352-365

The progress in nanofabrication has made possible the realization of optic nanodevices able to handle single photons and to exploit the quantum nature of single-photon states. In particular, quantum cryptography (or more precisely quantum key distribution, QKD) allows unconditionally secure exchange of cryptographic keys by the transmission of optical pulses each containing no more than one photon. Additionally, the coherent control of excitonic and photonic qubits is a major step forward in the field of solid-state cavity quantum electrodynamics, with potential applications in quantum computing. Here, we describe devices for realization of single photon generation and detection based on high resolution technologies and their physical properties. Particular attention will be devoted to the description of single-quantum dot sources based on photonic crystal microcavites optically and electrically driven: the electrically driven devices is an important result towards the realization of single photon source 'on demand'. A new class of single photon detectors, based on superconducting nanowires, the superconducting single-photon detectors (SSPDs) are also introduced: the fabrication techniques and the design proposed to obtain large area coverage and photon number-resolving capability are described.

Transmission electron microscopy of In(Ga)As quantum dot structure

Kątcki J., Ratajczak J., Łaszcz A., Phillipp F., Paranthoen C., Cheng X. L., Fiore A., Passaseo A., Cingolani R.

Electron Technology : Internet Journal

2003

Vol. 35, nr 4

1-6

The application of transmission electron microscopy (TEM) to the investigation of In(Ga)As quantum dot (QD) structures grown on GaAs substrates is reviewed. Using various examples of the QD structures the advantages of using TEM for the analysis of QDs are presented. From plan-view TEM images the areal density of dots can be determined in real structures where QDs are embedded in the structure. Cross-sectional TEM images inform us about the real geometry of the structure, the shape, width and height as well as the distribution of QDs. It is especially useful for the investigations of multilayer QD structures.

Optical gain saturation effects in InAs/GaAs self-assembled quantum dots

Wasiak M., Bugajski M., Machowska-Podsiadło E., Ochalski T., Kątcki J., Sarzała R.P., Maćkowiak P., Czyszanowski T., Nakwaski W., Chen J. X., Oesterle U., Fiore A., Ilegems M.

Optica Applicata

2002

Vol. 32, nr 3

291-299

An attempt has been made to understand electronic structure and optical (lasing) properties of self-assembled InAs/GaAs quantum dots (QD) and to describe saturation effects in QD levels population. The new, improved rate equation model has been developed. The impact of carrier relaxation and level depopulation inside quantum dots on lasing properties, in particular on gain depressing, is discusse.