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2 Opto-Electronics Review

2 1999

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Studies of relationship between deep levels and RoA product in mesa type HgCdTe devices

Yoshino J., Morimoto J., Wada H., Ajisawa A., Kawano M., Oda N.

Opto-Electronics Review

1999

Vol. 7, No. 4

361-367

The relationships between the figure of merit RoA representing the junction property and deep levels representing electric properties of semiconductors have been studied. RoA can be estimated by current-voltage (I-V) measurements. Deep levels can be estimated using spectral analysis of deep level transient spectroscopy (SADLTS). It has been confirmed that values of activation energies concentrate around 30 meV with the increase of RoA. This suggests that the influence from the inherent deep levels in the HgCdTe device becomes strong due to the increase of RoA, resulting in the improvement of the diode characteristics.

512x512 element GeSi/Si heterojunction infrared focal plane array

Wada H., Nagashima M., Hayashi K., Nakanishi J., Kimata M., Kumada N., Ito S.

Opto-Electronics Review

1999

Vol. 7, No. 4

305-311

We have developed a monolithic 512x512 element GeSi/Si heterojunction infrared focal plane array (FPA). The operation mechanism of the GeSi/Si heterojunction detector is the same as that of the PtSi/Si Schottky- barrier detector. We have fabricated the GeSi/Si heterojunction using molecular beam epitaxy (MBE) technology, and have confirmed that ideal strained GeSi films are grown on Si substrates. We have evaluated the dependencies of spectral responsivity on the Ge composition, impurity concentration and GeSi thickness, and have optimized them for 8-12 um infrared detection. The 512x512 element FPA has a pixel size of 34 x 34 um2 and a fill factor of 59%. A low noise equivalent temperature difference of 0.08 K ( f/2.0 ) was obtained with a 300 K background with a very small responsivity dispersion of 2.2%.