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Comprasion of different substrates for a fully depleted SOI-CMOS-technology

Huttner T., Wurzer H., Mahnkopf R., Pindl S., Abstreiter G.

Electron Technology

1999

Vol. 32, No. 1/2

151-153

Fully depleted SOI technologies require high quality substrates. In this work the properties of one full dose SIMOX and teo different BESOI substrates were compared. Body thickness variation and theshold voltage variation, defect density, parasitic bipolar action and hot carie reliability wee evaluated using n MOS and pMOS transistors and MOS capacitors. Overall UNIBOND wafers are best suited as substrates for a fully depleted SOI CMOS technology.