Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Powiadomienia systemowe
  • Sesja wygasła!

Znaleziono wyników: 3

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
EN
Black TiO2 nanofibers have recently emerged as a promising material that has both advantages of black metal oxide and one-dimensional nanostructure. However, current reduction-based synthesis approaches are not compatible with practical applications because these processes require high process costs, complicated processes, and sophisticated control. Therefore, it is still necessary to develop a simple and facile method that can easily introduce atomic defects during the synthesis process. This work suggests an electrospinning process with an antioxidant and subsequent calcination process for the facile synthesis of black TiO2 nanofibers. The synthesized black TiO2 nanofiber has an average diameter of 50.3 nm and a rutile structure. Moreover, this nanofiber represented a noticeable black color and a bandgap of 2.67 eV, clearly demonstrating the bandgap narrowing by the introduced atomic defects.
EN
In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity. The fibrous Ga2O3 templates were prepared by calcining the polymer/gallium precursor nanofiber synthesized by an electrospinning process, and their crystallinity was varied by controlling the calcination temperature from 500°C to 900°C. GaN nanostructures were transformed by nitriding the Ga2O3 nanofibers using NH3 gas. All of the transformed GaN nanostructures maintained a one-dimensional structure well and exhibited a diameter of about 50 nm, but their morphology was clearly distinguished according to the crystallinity of the templates. When the templates having a relatively low crystallinity were used, the transformed GaN showed a hollow nanostructure, and as the crystallinity increased, GaN was converted into a denser nanostructure. This morphological difference can be explained as being caused by the difference in the diffusion rate of Ga depending on the crystallinity of Ga2O3 during the conversion from Ga2O3 to GaN. It is expected that this technique will make possible the tubular nanostructure synthesis of nitride functional nanomaterials.
EN
Molybdenum (Mo) is used to form a barrier layer for metal wiring in displays or semiconductor devices. Recently, researches have been continuously attempted to fabricate Mo sputtering targets through additive manufacturing. In this study, spherical Mo powders with an average particle size of about 37 um were manufactured by electrode induction melting gas atomization. Subsequently, Mo layer with a thickness of 0.25 mm was formed by direct energy deposition in which the scan speed was set as a variable. According to the change of the scan speed, pores or cracks were found in the Mo deposition layer. Mo layer deposited with scan speed of 600 mm/min has the hardness value of 324 Hv with a porosity of approximately 2%. We demonstrated that Mo layers with higher relative density and hardness can be formed with less effort through direct energy deposition compared to the conventional powder metallurgy.
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.