Wyniki wyszukiwania - BazTech

1

Properties of thin films of high-k oxides grown by atomic layer deposition at low temperature for electronic applications

Gieraltowska S., Wachnicki Ł., Witkowski B. S., Godlewski M., Guziewicz E.

Optica Applicata

|

2013

|

Vol. 43, nr 1

17--25

EN

Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In this work, we present the comparison of structural, morphological and electrical properties of binary and composite layers of high-k oxides that include hafnium dioxide (HfO2), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). We deposit thin films of high-k oxides using atomic layer deposition (ALD) and low growth temperature (60–240 °C). Optimal technological growth parameters were selected for the maximum smoothness, amorphous microstructure, low leakage current, high dielectric strength of dielectric thin films, required for gate applications. High quality of the layers is confirmed by their introduction to test electronic structures, such as thin film capacitors, transparent thin film capacitors and transparent thin film transistors. In the latter structure we use semiconductor layers of zinc oxide (ZnO) and insulating layers of high-k oxide grown by the ALD technique at low temperature (no more than 100 °C).

2

Tlenki dielektryczne wytwarzane metodą osadzania warstw atomowych w niskich temperaturach dla zastosowań w elektronice jako izolatory

Gierałtowska S., Wachnicki Ł., Witkowski B. S., Godlewski M., Guziewicz E.

Elektronika : konstrukcje, technologie, zastosowania

|

2012

|

Vol. 53, nr 9

68-70

PL

Tlenki o wysokiej stałej dielektrycznej (ang. high-k oxides) pełniące funkcję izolatora są powszechnie wykorzystywane w przyrządach półprzewodnikowych (procesorach, pamięciach masowych). Nasze badania zostały skoncentrowane na optymalizacji parametrów technologicznych wzrostu cienkich warstw dielektrycznych: dwutlenku hafnu (HfO₂), tlenku glinu (Al₂O₃) oraz dwutlenku cyrkonu (ZrO₂), a także ich warstw kompozytowych. Wysokiej jakości tlenki zostały otrzymane z wykorzystaniem metody osadzania warstw atomowych (ang. Atomie Layer Deposition, ALD) w niskiej temperaturze (60...240 C).

EN

Oxides with high dielectric constant (called "high-k oxides") as insulators are commonly used in semiconductor manufacturing processes. Our research was focused on the optimization of technological growth parameters for thin dielectric films: hafnium dioxide (HfO₂), aluminum oxide (Al₂O₃) and zirconium oxide (ZrO₂), and their composite layers. High quality oxides were prepared using the Atomic Layer Deposition method Atomic Layer Deposition (ALD) at low temperature (60-240 C).

3

Technologia Osadzania Warstw Atomowych : zastosowania w elektronice

Godlewski M., Guziewicz E., Łuka G., Gierałtowska S., Krajewski T. A., Wachnicki Ł.

Elektronika : konstrukcje, technologie, zastosowania

|

2011

|

Vol. 52, nr 8

82-84

PL

W pracy omówiony jest postęp w miniaturyzacji tranzystorów polowych w układach scalonych, który zawdzięczamy wprowadzeniu do linii produkcyjnych nowej technologii osadzania warstw dielektryków podbramkowych - technologii Osadzania Warstw Atomowych (ALD). Zalety tej metody są krótko omówione. Omówione są także możliwe zastosowania tlenku cynku w przyrządach elektronicznych.

EN

We describe shortly further progress in miniaturization of field effect transistors in integrated circuits, which was possible due to introduction of a new deposition method (Atomic Layer Deposition, ALD) in produetion lines for deposition of gate oxides. Advantages of the ALD method are shortly summarized. We also discuss possible use of zinc oxide in electronic devices.

4

Nanodruty ZnO otrzymywane metodą Osadzania Warstw Atomowych do zastosowań sensorowych

Wachnicki Ł., Witkowski B. S., Gierałtowska S., Kopalko K., Guziewicz E., Godlewski M.

Elektronika : konstrukcje, technologie, zastosowania

|

2011

|

Vol. 52, nr 8

85-86

PL

W pracy przedstawiamy wzrost nanodrutów ZnO metodą osadzania warstw atomowych ALD (ang. Atomic Layer Deposition). Do otrzymania nanodrutów ZnO użyto podtoże GaAs pokryte mieszaniną złota i galu uformowanego na powierzchni w postaci rozseparowanych "nanokul". W procesie ALD jako prekursor tlenowy została użyta woda dejonizowana, natomiast jako prekursor cynkowy został użyty chlorek cynku. Odpowiednio przygotowana mieszanina Au-Ga odgrywała rolę katalizatora wzrostu nanosłupków ZnO. Otrzymano nanosłupki ZnO w postaci krystalitów o długości do 1 mikrometra i około 100 nanometrów średnicy. Warto zaznaczyć, że jest to pierwsze zastosowanie metody ALD do wzrostu nanosłupków ZnO. Otrzymane nanosłupki użyto do wytworzenia czułych sensorów rozpuszczalników.

EN

In this work we present growth of ZnO nanowires (NWs) using ALD. As a substrate we used gallium arsenide with Au-Ga eutectic mixture prepared on the surface at high temperature. The soprepared substrate was used for growth of ZnO NWs using the ALD system. We used deionized water and zinc chloride as an oxygen and zinc precursors, respectively. The eutectic mixture plays a role of a catalyst for the ZnO NWs growth. The ZnO nanorods were obtained in a form of crystallites of up to 1 µm length and 100 nm diameter. It is the first demonstration of ZnO NWs growth by ALD using VLS (vapour-liquid-solid) approach. We demonstrate their application as solvents sensor.

5

Optical and electrical characterization of defects in zinc oxide thin films grown by atomic layer deposition

Krajewski T. A., Łuka G., Wachnicki Ł., Jakieła R., Witkowski B., Guziewicz E., Godlewski M., Huby N., Tallarida G.

Optica Applicata

|

2009

|

Vol. 39, nr 4

865-874

EN

In the present paper, we discuss the influence of point defects on electrical and optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD) method. The films were grown on glass substrates at low temperature (100-200 °C). We used diethylzinc (DEZn) and deionized water as precursors. Room temperature photoluminescence (RT PL) spectra, secondary ion mass spectroscopy (SIMS), electron dispersive X-ray (EDX) analysis and Hall effect measurements were made for as-grown ZnO layers and for the annealed ones (in air at 300 and 400 °C as well as in N2 atmosphere at 400 °C). The air-annealed ZnO films reveal a substantial reduction of a carrier concentration (up to 4 orders of magnitude - from 1019 to 1015 cm-3) combined with changes in intensity of the defect-related luminescence bands. PL related to deep defects is shifted towards the lower energy range (red light emission) after annealing (in air and nitrogen-rich conditions).

6

Photoemission of 4f and 5f systems

Guziewicz E.

Optica Applicata

|

2006

|

Vol. 36, nr 2-3

321-338

EN

Photoemission studies provide an extensive insight into the electronic structure and are crucial for comprehension of the wide range of ground state properties found in lanthanide and actinide materials. This paper reviews different techniques used in photoemission experiments with respect to investigation of such specific aspects of the electronic structure of 4f and 5f systems as mixed valence, localization of 4f electron shell, and dual character of the 5f electrons. Photoemission results on lanthanide and actinide systems are also presented.

7

Thin films of ZnO and ZnMnO by atomic layer epitaxy

Wójcik A., Kopalko K., Godlewski M., Łusakowska E., Guziewicz E., Minikayev R., Paszkowicz W., Świderski J., Klepka M., Jakieła R., Kiecana M., Sawicki M., Dybko K., Phillips M. R.

Optica Applicata

|

2005

|

Vol. 35, nr 3

413-4217

EN

We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.

8

Procesy rekombinacji promienistej w cienkich warstwach ZnSe hodowanych metodą epitaksji warstw atomowych

Godlewski M., Guziewicz E., Szczerbakov A., Godlewski M. M., Phllips M. R.

Elektronika : konstrukcje, technologie, zastosowania

|

2001

|

Vol. 42, nr 8-9

26-28

EN

Monocrystalline films of sphaierite-type ZnSe are produced on Ga-As (100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system (ALE-GF). These films show very flat surfaces and very good spectral properties. Bright blue-color excitonic „edge" photoluminescence (PL) emission, characteristic of good quality samples, is observed up to the room temperature. The „parasite" red PL emission, coming from the ZnSe/GaAs interface region, is also observed. The blue and red band PL emissions, when observed together, give an impression of a white color light. The high brightness of such white color PL emission makes ALE-grown ZnSe layers good candidates as e.g. backlighting electroluminescence devices for produced at large scale liquid crystal displays.

9

From metal-semiconductor junction to ternary alloy crystal

Guziewicz E., Orłowski B. A., Kowalski B. J., Barrett N., Belkhou R., Radosavkic D., Martinotti D., Guillot C., Lacharme J. P., Sebenne C. A.

Electron Technology

|

1998

|

Vol. 31, No. 3/4

323-327

EN

Paper presents the application of the photoemission electron spectroscopy (PES) for investigation of the valance band electronic structure of clean CdTe (110) surface relaxed 1 x 1 and this surface sequentially covered by small amount (from 0.2 to 20 ML) of Fe atoms. In the first stages of the Fe depositon (0.2 ML up to 0.6 ML) the creation of the ternary alloy Cd1-xFexTe mainly occurs. For further Fe deposition the Fe layers if formed over the Cd1-xFexTe surface. Diffusion of the Fe atoms occurs under the sample heating, and it leads to the creation of the Fe enriched Cd1-xFexTe ternary alloy.