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Damage reduction of explosively driven spallation by machining v-notch rows on the surfaces of 304 stainless steel plates

Hiroe T., Fujiwara K., Hata H., Natasato K., Mizokami K.

Engineering Transactions

2011

Vol. 59, iss. 1

5-13

Plane detonation waves generated in the explosive PETN with use of wire-row explosion technique for initiation have been applied to study on spall behaviour for circular plates of 304 stainless steel, and the slanting surface effects on the damage phenomena for conic frustums and circular cones. In this paper, V-notch rows are produced on the free surface of the square plate specimens of the same material and plane shock waves are similarly transferred from the other surface. The cross-sectional observation of tested and recovered specimens shows that remarkable effects on the reduction of spall damages have been achieved in case of appropriate V-notch configurations. The e?ect seems to come obviously from weakened interaction of release waves due to the dispersion of directions for reflection waves, and a hydro-code. Autodyn 2D/3D has successfully reproduced the experimental results numerically, suggesting a notch parameter chart for spall damage evaluation.

Low-cost 320 x 240 uncooled IRFPA using conventional silicon IC process

Ishikawa T., Ueno M., Endo K., Nakaki Y., Hata H., Sone T., Kimata M.

Opto-Electronics Review

1999

Vol. 7, No. 4

297-303

A 320 x 240 uncooled infrared focal plane array (IRFPA) with series PN junction diodes fabricated on a silicon-on-insulator (SOI) wafer has been developed. Resistive bolometers, pyroelectric detectors and thermopile detectors have been reported for large scale uncooled IRFPAs, while the detector developed uses the temperature dependence of forward-biased voltage of the diode. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI film which has few defects. The diode is supported by buried silicon dioxide (BOX) film of the SOI wafer, which becomes a part of a thermal isolated structure by using bulk silicon micromachining technique. The detector constains an absorbing membrane with a high fill factor of 90% to achieve high IR absorption, and the readout circuit of the FPA constains a gate modulation integrator to suppress the noise. Low cost IRFPA can be supplied because the whole structure of the FPA is fabricated on commercial SOI wafers using a conventional silicon IC process.