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Modelling and optimisation of high-temperature detectors of long wavelength infrared radiation with optically resonant cavity

Sioma M., Piotrowski J.

Opto-Electronics Review

2004

Vol. 12, No. 1

157--160

We present an analysis and optimisation of optical resonant cavity enhanced (ORC) long wavelength Hg₁₋xCdxTe photovoltaic detectors operating at near room temperatures. The resonant cavity is based on Hg₁₋xCdxTe Bragg reflector and detector heterostructure grown on a GaAs substrate, supplied with a metal back reflector. Such devices are compatible with low-temperature epitaxial (MBE and MOCVD) techniques. The optical gain due to ORC enhancement was calculated for the ambient temperature and the temperatures achievable with two-stage Peltier cooled 10.6 um detectors as a function of the device design and an incidence angle.

Numerical modelling of InGaAs infrared photovoltaic detectors

Sioma M., Kaniewski J.

Optica Applicata

2002

Vol. 32, nr 3

517-522

The performance of p-i-n infrared detectors has been studied theoretically. Optimization of InxGa1–xAs device structure has been performed for three compositions, x = 0.53, x = 0.82 and x = 1, which are important from the application point of view. Calculations have been performed by means of APSYS simulation program and the model based on fundamental limitations to the detector operation. The influence of layer thickness, as well as doping concentration in the active layer on zero bias resistance and detectivity of devices optimized for desired cut-off wavelength have been discussed. Additionally, the photovoltaic effect across the structure has been discussed. Finally, the influence of the ohmic contact position on photodiode parameters has been shown.