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1 1998

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Some optical properties of amorphous In-Se thin films

Michalewicz A., Jarząbek B., Cisowski J., Jurusik J., Burian A. M., Weszka J.

Electron Technology

1998

Vol. 31, No. 3/4

411-416

Studies of the optical properties of amorphous thin films of In-Se (a-In-Se) thermally evaporated from the bulk polycrystalline In2Se3 are presented. The absorption coefficient and rrefractive index are obtained from the transmission and reflectivity spectra, covering the energy range 0.4÷6.2 eV. The fundamental absorption edge, found from the tauc relation, increases from 1.64 eV to 1.73 eV, when decreasing the deposition rate from 0.7 nm/s to 16.7 nm/s. The values of refractive index are of 2.60÷2.67 and the broad peak in the reflectivity spectra at about 5 eV is thought to be attributed to the four-coordinated In atoms which are dominated in a-In-Se films under study. The surface morphology has been examineted by the atomic force microscopy (AFM) showing that the surface of the films studied is rather smooth with, however, some growth defects of density depending on the deposition conditions.