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Heterostructures GexSe₁-x/Si as a material for solar cells

Sheregii E. M., Pociask M. M., Tomaka G., Kąkol T., Pociask M. A.

Opto-Electronics Review

2000

Vol. 8, No. 4

350-352

In Ge-Si heterostructure system, strain and compositional changes can be used to change the fundamental indirect absorption edge. It is well known that increase in Ge content in the GexSi₁-x shifts fundamental band edge to the longer wavelengths and causes strong increase in absorption coefficient. Theoretical description of increase in efficiency of solar cells based on this system in comparison with the silicon solar cells is given. A construction of photodiodes using heterostructure Ge₀.₂Si₀.₈/Si is proposed.